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Semiconductors

, Volume 53, Issue 12, pp 1573–1577 | Cite as

Recombination of Mobile Carriers Across Boron Excited Levels in Silicon at Low Temperatures

  • T. T. MuratovEmail author
ELECTRONIC PROPERTIES OF SEMICONDUCTORS
  • 3 Downloads

Abstract

Carrier recombination through shallow boron-impurity centers in doped weakly compensated silicon is studied. Much attention is paid to theoretical explanation of the “empirical” temperature dependences of the carrier lifetime τ(T) in the temperature range of (1.7–4.2) K at the doping level nB ≥ 1014 cm–3 and compensation ≤10% (nd + na ≤ 1013 cm–3. It is possible to rather accurately determine that the shallow excited level with a binding energy of 5 meV (3s-state) is quasi-resonant. Approximate formulas for the trapping efficiency are obtained. The effect of “weak” magnetic field (102–103) G on the capture coefficient is studied; it is shown that the “weak” magnetic field slightly reduces the lifetime of carriers, thus stimulating their recombination.

Keywords:

recombination paths resonant level trapping efficiency lifetime photoconductivity classical “weak” and “strong” magnetic fields 

Notes

CONFLICT OF INTEREST

The author declares that he has no conflict of interest.

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Copyright information

© Pleiades Publishing, Ltd. 2019

Authors and Affiliations

  1. 1.Tashkent State Pedagogical University named after NizamiTashkentUzbekistan

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