High-Resistivity Gallium Antimonide Produced by Metal–Organic Vapor-Phase Epitaxy
The results of studies of nominally undoped epitaxial p-GaSb layers grown by metal–organic vapor-phase epitaxy at a ratio TMSb/TEGa in the range from 1 to 50 are reported. At the ratio TMSb/TEGa = 50, GaSb epitaxial layers, whose resistivity is 400 Ω cm, are produced. It is shown that, for such layers, the crystal quality assessed by several methods remains comparable to the quality of n-GaSb substrates used for the growth of nominally undoped GaSb layers.
Keywords:vapor-phase epitaxy substrate high-resistivity gallium antimonide crystal quality
We are grateful to S.I. Troshkov (Ioffe Institute) for imaging the cleavages and surfaces of the samples with a scanning electron microscope and to V.Yu. Davydov (Ioffe Institute) for support and attention to this study.
CONFLICT OF INTEREST
The authors declare that they have no conflict of interest.
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