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Semiconductors

, Volume 53, Issue 12, pp 1563–1567 | Cite as

High-Resistivity Gallium Antimonide Produced by Metal–Organic Vapor-Phase Epitaxy

  • R. V. LevinEmail author
  • A. S. Vlasov
  • A. N. Smirnov
  • B. V. Pushnyi
NONELECTRONIC PROPERTIES OF SEMICONDUCTORS (ATOMIC STRUCTURE, DIFFUSION)

Abstract

The results of studies of nominally undoped epitaxial p-GaSb layers grown by metal–organic vapor-phase epitaxy at a ratio TMSb/TEGa in the range from 1 to 50 are reported. At the ratio TMSb/TEGa = 50, GaSb epitaxial layers, whose resistivity is 400 Ω cm, are produced. It is shown that, for such layers, the crystal quality assessed by several methods remains comparable to the quality of n-GaSb substrates used for the growth of nominally undoped GaSb layers.

Keywords:

vapor-phase epitaxy substrate high-resistivity gallium antimonide crystal quality 

Notes

ACKNOWLEDGMENTS

We are grateful to S.I. Troshkov (Ioffe Institute) for imaging the cleavages and surfaces of the samples with a scanning electron microscope and to V.Yu. Davydov (Ioffe Institute) for support and attention to this study.

CONFLICT OF INTEREST

The authors declare that they have no conflict of interest.

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Copyright information

© Pleiades Publishing, Ltd. 2019

Authors and Affiliations

  • R. V. Levin
    • 1
    Email author
  • A. S. Vlasov
    • 1
  • A. N. Smirnov
    • 1
  • B. V. Pushnyi
    • 1
  1. 1.Ioffe InstituteSt. PetersburgRussia

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