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Semiconductors

, Volume 53, Issue 12, pp 1637–1645 | Cite as

Effect of the Samarium Impurity on the Local Structure of Se95Te5 Chalcogenide Glassy Semiconductor and Current Passage through Al–Se95Te5〈Sm〉–Te Structures

  • S. U. AtaevaEmail author
  • S. I. Mekhtieva
  • A. I. Isaev
  • S. N. Garibova
  • A. S. Huseynova
AMORPHOUS, VITREOUS, AND ORGANIC SEMICONDUCTORS
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Abstract

The effect of samarium doping on the local structure and morphological features of the surface of a Se95Te5 chalcogenide glassy semiconductor film is investigated by X-ray diffraction analysis and atomic force microscopy, and the effect of doping on the current flow through Al–Se95Te5〈Sm〉–Te structures is examined by measuring the IV characteristics in the steady-state mode. The results obtained are interpreted using Lampert’s theory of injection currents, the Elliott void-cluster model, and the Mott and Street charged defects model proposed for chalcogenide glasses.

Keywords:

chalcogenide glasses first sharp diffraction maximum local structure IV characteristic unipolar injection 

Notes

CONFLICT OF INTEREST

The authors have no conflict of interest to declare.

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Copyright information

© Pleiades Publishing, Ltd. 2019

Authors and Affiliations

  • S. U. Ataeva
    • 1
    Email author
  • S. I. Mekhtieva
    • 1
  • A. I. Isaev
    • 1
  • S. N. Garibova
    • 1
    • 2
  • A. S. Huseynova
    • 1
  1. 1.Abdullaev Institute of Physics, Azerbaijan National Academy of SciencesBakuAzerbaijan
  2. 2.Khazar UniversityBakuAzerbaijan

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