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Semiconductors

, Volume 53, Issue 15, pp 2007–2011 | Cite as

Predicting the Conditions for the Vapor-Phase Epitaxy of the III–V Compounds

  • E. N. VigdorovichEmail author
TECHNOLOGICAL PROCESSES AND ROUTES

Abstract

Chloride-hydride epitaxy is the main vapor-phase technique for forming layers of functional homostructures and heterostructures for microelectronics and optoelectronics. At present, nanoheterostructures are obtained by MOS-hydride and molecular epitaxy; the molecular-layering technique is currently being perfected. The occurrence of new materials requires long-term development of the optimal technological conditions for their fabrication and the mathematical, physical, and other principles for modeling these processes. The chloride-hydride method continues to be perfected for forming relatively thick layers of functional heterostructures. The work outlines the fundamentals of physicochemical modeling by the example of chloride-hydride epitaxy. A physicochemical model of the variation in the technological modes of the vapor-phase epitaxy of different compounds under the corresponding conditions, which facilitate the formation of compounds with the same degree of disorder, is discussed. Equations for predicting the conditions for the epitaxy of other materials of the same group by the well-developed technology of a material have been derived. The obtained regularities can be used to optimize the chloride-hydride epitaxy of gallium phosphide and solid solutions based on it. The calculated conditions for gallium-nitride epitaxy are shown to be in good agreement with the conditions of real technological developments made by other authors.

Keywords:

gallium arsenide gallium phosphide gallium nitride vapor-phase epitaxy crystallization energy free surface energy thermodynamic supersaturation 

Notes

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© Pleiades Publishing, Ltd. 2019

Authors and Affiliations

  1. 1.Russian Technological University MIREAMoscowRussia

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