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Semiconductors

, Volume 53, Issue 11, pp 1415–1418 | Cite as

Do Chemical Effects Affect the Accumulation of Structural Damage during the Implantation of Fluorine Ions into GaN?

  • A. I. TitovEmail author
  • K. V. Karabeshkin
  • P. A. Karaseov
  • A. I. Struchkov
NONELECTRONIC PROPERTIES OF SEMICONDUCTORS (ATOMIC STRUCTURE, DIFFUSION)
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Abstract

The accumulation of structural damage in GaN under irradiation with accelerated F and Ne ions with energies of 1.3 and 3.2 keV/amu is investigated. It is shown that chemical effects during implantation of fluorine ions within the doses under consideration do not noticeably affect the formation of stable structural damage both in the bulk and on the surface of GaN.

Keywords:

GaN ion irradiation defect engineering chemical effects 

Notes

FUNDING

This study was supported by the Russian Foundation for Basic Research, project no. 18-08-01213.

CONFLICT OF INTEREST

The authors claim that they have no conflict of interest.

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Copyright information

© Pleiades Publishing, Ltd. 2019

Authors and Affiliations

  • A. I. Titov
    • 1
    Email author
  • K. V. Karabeshkin
    • 1
  • P. A. Karaseov
    • 1
  • A. I. Struchkov
    • 1
  1. 1.Peter the Great St. Petersburg Polytechnic UniversitySt. PetersburgRussia

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