On the Phase Composition, Morphology, and Optical and Electronic Characteristics of AlN Nanofilms Grown on Misoriented GaAs(100) Substrates
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Thin AlN nanofilms are produced by reactive ion-plasma deposition onto GaAs(100) substrates misoriented with respect to the 〈100〉 direction to different degrees. It is shown that growth on substrates misoriented with respect to the 〈100〉 direction to different degrees results in the formation of AlN films with different phase compositions and crystal states. An increase in the degree of misorientation of the GaAs(100) substrate used for growth influences both the structural quality of AlN nanofilms and their electronic structure, surface morphology, and optical properties. Thus, the morphology, surface composition, and optical functional characteristics of AlN/GaAs(100) heterophase systems can be controlled using differently misoriented GaAs(100) substrates.
Keywords:AlN GaAs misorientation ion-plasma deposition
The experimental studies were conducted using scientific and technological equipment of the Multiple-Access Center for Scientific Facilities, Voronezh State University.
The study was supported by the President of the Russian Federation, project MD-42.2019.2, and the Government of the Russian Federation, resolution no. 211, agreement no. 02.A03.21.0006.
The part of the study concerned with controlling the morphology and composition of bulk and porous substrates was fulfilled by the Ioffe Institute.
The part of the study concerned with the diagnostics of integrated structures was supported by the Ministry of Education and Science of the Russian Federation, government order to institutes of higher education in the field of research activities for 2017–2019, project no. 11.4718.2017/8.9.
CONFLICT OF INTEREST
The authors declare that they have no conflict of interest.
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