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Semiconductors

, Volume 53, Issue 11, pp 1489–1495 | Cite as

Time-Resolved Photoluminescence of InGaAs Nanostructures Different in Quantum Dimensionality

  • A. M. NadtochiyEmail author
  • S. A. Mintairov
  • N. A. Kalyuzhnyy
  • M. V. Maximov
  • D. A. Sannikov
  • T. F. Yagafarov
  • A. E. Zhukov
SEMICONDUCTOR STRUCTURES, LOW-DIMENSIONAL SYSTEMS, AND QUANTUM PHENOMENA
  • 16 Downloads

Abstract

The time-resolved photoluminescence of quantum-confined InGaAs heterostructures grown on GaAs substrates is studied by time-correlated single photon counting. The heterostructures have different dimensionalities: the structures are formed as quantum dots, quantum wells, and structures of transition dimensionality (quantum well-dots). It is found that the room-temperature photoluminescence decay time of the samples substantially depends on their dimensionality and corresponds to 6, 7, and >20 ns for quantum dots, well-dots, and wells, respectively. It is thought that the presence of localization centers for charge carriers can be responsible for the experimentally observed shortening of the photoluminescence time in the heterostructures.

Keywords:

photoluminescence time resolution quantum-confined structures 

Notes

FUNDING

The study was supported by the Russian Science Foundation, project no. 16-12-10269.

CONFLICT OF INTEREST

The authors declare that they have no conflict of interest.

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Copyright information

© Pleiades Publishing, Ltd. 2019

Authors and Affiliations

  • A. M. Nadtochiy
    • 1
    Email author
  • S. A. Mintairov
    • 2
  • N. A. Kalyuzhnyy
    • 2
  • M. V. Maximov
    • 1
  • D. A. Sannikov
    • 3
    • 4
  • T. F. Yagafarov
    • 3
  • A. E. Zhukov
    • 1
  1. 1.St. Petersburg National Research Academic University, Russian Academy of SciencesSt. PetersburgRussia
  2. 2.Ioffe InstituteSt. PetersburgRussia
  3. 3.Skolkovo Institute of Science and TechnologyMoscowRussia
  4. 4.Lebedev Physical Institute, Russian Academy of SciencesMoscowRussia

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