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Semiconductors

, Volume 53, Issue 11, pp 1545–1549 | Cite as

Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching

  • Ya. V. Levitskii
  • M. I. Mitrofanov
  • G. V. Voznyuk
  • D. N. Nikolayev
  • M. N. Mizerov
  • V. P. EvtikhievEmail author
FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES
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Abstract

The ion-beam etching of AlGaAs/GaAs heterostructures gives rise to radiation defects and, as a result, leads to photoluminescence quenching. Annealing at 620°C in an atmosphere of As almost completely restores the quantum efficiency of photoluminescence in the case of radiation-induced defects lying at a distance of up to 150 nm from the heterointerface.

Keywords:

focused ion beam direct ion lithography nanolithography radiation defects annealing microphotoluminescence 

Notes

FUNDING

We are grateful to the Russian Science Foundation (grant no. 16-12-10503).

CONFLICT OF INTEREST

The authors state that they have no conflict of interest.

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Copyright information

© Pleiades Publishing, Ltd. 2019

Authors and Affiliations

  • Ya. V. Levitskii
    • 1
  • M. I. Mitrofanov
    • 1
  • G. V. Voznyuk
    • 1
  • D. N. Nikolayev
    • 1
  • M. N. Mizerov
    • 1
  • V. P. Evtikhiev
    • 1
    Email author
  1. 1.Ioffe InstituteSt. PetersburgRussia

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