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Semiconductors

, Volume 53, Issue 11, pp 1457–1464 | Cite as

Effect of Ion-Beam Processing during RF Magnetron Sputtering on the properties of ZnO Films

  • P. N. KrylovEmail author
  • A. S. Alalykin
  • E. A. Durman
  • R. M. Zakirova
  • I. V. Fedotova
SURFACES, INTERFACES, AND THIN FILMS
  • 17 Downloads

Abstract

The effect of ion-beam processing alternating with magnetron sputtering on the properties of zinc-oxide thin films is investigated. It is shown that ion-beam processing reduces the growth rate, coherent-scattering-region sizes, and the resistivity. The stoichiometric index, band gap, and refractive index increase. The transparency of the films in the weak absorption region remains unchanged.

Keywords:

ion-beam processing zinc oxide magnetron sputtering 

Notes

CONFLICT OF INTEREST

The authors declare that they have no conflict of interest.

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Copyright information

© Pleiades Publishing, Ltd. 2019

Authors and Affiliations

  • P. N. Krylov
    • 1
    Email author
  • A. S. Alalykin
    • 1
  • E. A. Durman
    • 1
  • R. M. Zakirova
    • 1
  • I. V. Fedotova
    • 1
  1. 1.Udmurt State UniversityIzhevskRussia

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