Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions
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The optical properties of float-zone (FZ) silicon irradiated with swift heavy ions (SHI) are studied. In the low-temperature photoluminescence spectra, a broad peak in the range 1.3–1.5 μm is evident along with the well-known X, W, W', R, and C lines. In this case, it is found that, as the irradiation dose is increased in the range 3 × 1011–1013 cm–2, the photoluminescence peak falls and narrows and, at the same time, its maximum shifts to longer wavelengths.
Keywords:photoluminescence defects in silicon swift heavy ions
We are grateful to Prof. M. Stoffel and Prof. M. Vergnat (Université de Lorraine, Institut Jean Lamour, France) for their help in recording the PL spectra.
The study was supported by the Ministry of Education and Science of the Russian Federation, government order, Program of fundamental research no. 0306-2019-0019 for the Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences.
CONFLICT OF INTEREST
The authors declare that they have no conflict of interest.
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