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Semiconductors

, Volume 53, Issue 11, pp 1427–1430 | Cite as

Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions

  • S. G. CherkovaEmail author
  • V. A. Skuratov
  • V. A. Volodin
SPECTROSCOPY, INTERACTION WITH RADIATION
  • 15 Downloads

Abstract

The optical properties of float-zone (FZ) silicon irradiated with swift heavy ions (SHI) are studied. In the low-temperature photoluminescence spectra, a broad peak in the range 1.3–1.5 μm is evident along with the well-known X, W, W', R, and C lines. In this case, it is found that, as the irradiation dose is increased in the range 3 × 1011–1013 cm–2, the photoluminescence peak falls and narrows and, at the same time, its maximum shifts to longer wavelengths.

Keywords:

photoluminescence defects in silicon swift heavy ions 

Notes

ACKNOWLEDGMENTS

We are grateful to Prof. M. Stoffel and Prof. M. Vergnat (Université de Lorraine, Institut Jean Lamour, France) for their help in recording the PL spectra.

FUNDING

The study was supported by the Ministry of Education and Science of the Russian Federation, government order, Program of fundamental research no. 0306-2019-0019 for the Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences.

CONFLICT OF INTEREST

The authors declare that they have no conflict of interest.

REFERENCES

  1. 1.
    C. Sun, M. T. Wade, Y. Lee, J. S. Orcutt, L. Alloatti, M. S. Georgas, A. S. Waterman, J. M. Shainline, R. R. Avizienis, S. Lin, B. R. Moss, R. Kumar, F. Pavanello, A. H. Atabaki, H. M. Cook, et al., Nature (London, U.K.) 528, 534 (2015).ADSCrossRefGoogle Scholar
  2. 2.
    H. Ennen, G. Pomrenke, A. Axmann, K. Eisele, W. Haidl, and J. Schneider, Appl. Phys. Lett. 46, 361 (1985).ADSCrossRefGoogle Scholar
  3. 3.
    V. Yu. Timoshenko, O. A. Shalygina, M. G. Lisachenko, D. M. Zhigunov, S. A. Teterukov, P. K. Kashkarov, D. Kovalev, M. Zacharias, K. Imakita, and M. Fujii, Phys. Solid State 47, 121 (2005).ADSCrossRefGoogle Scholar
  4. 4.
    H. Sunamura, N. Usami, Y. Shiraki, and S. Fukatsu, Appl. Phys. Lett. 66, 3024 (1995).ADSCrossRefGoogle Scholar
  5. 5.
    A. A. Shklyaev, A. V. Latyshev, and M. Ichikava, Semiconductors 44, 432 (2010).ADSCrossRefGoogle Scholar
  6. 6.
    N. A. Sobolev, Semiconductors 44, 1 (2010).ADSCrossRefGoogle Scholar
  7. 7.
    N. A. Sobolev, A. E. Kalyadin, V. I. Sakharov, I. T. Serenkov, E. N. Shek, E. O. Parshin, N. S. Melesov, and S. G. Simakin, Semiconductors 53, 156 (2019).ADSCrossRefGoogle Scholar
  8. 8.
    N. A. Drozdov, A. A. Patrin, and V. D. Tkachev, JETP Lett. 23, 597 (1976).ADSGoogle Scholar
  9. 9.
    V. V. Kveder, E. A. Steinman, S. A. Shevchenko, and H. G. Grimmeiss, Phys. Rev. B 51, 10520 (1995).ADSCrossRefGoogle Scholar
  10. 10.
    V. V. Kveder, M. Badylevich, E. A. Steinman, A. Izotov, M. Seibt, and W. Schröter, Appl. Phys. Lett. 84, 2106 (2004).ADSCrossRefGoogle Scholar
  11. 11.
    L. I. Fedina, A. K. Gutakovskii, and T. S. Shamirzaev, J. Appl. Phys. 124, 053106 (2018).ADSCrossRefGoogle Scholar
  12. 12.
    C. G. Kirkpatrick, J. R. Noonan, and B. G. Streetman, Rad. Eff. 30, 97 (1976).CrossRefGoogle Scholar
  13. 13.
    C. E. Jones, E. S. Johnson, W. D. Compton, J. R. Noonan, and B. G. Streetman, J. Appl. Phys. 44, 5402 (1973).ADSCrossRefGoogle Scholar
  14. 14.
    V. D. Tkachev, C. Schrödel, and A. V. Mudryi, Rad. Eff. 49, 1333 (1980).Google Scholar
  15. 15.
    Y. Yang, J. Bao, C. Wang, and M. J. Aziz, J. Appl. Phys. 107, 123109 (2010).ADSCrossRefGoogle Scholar
  16. 16.
    F. Studer, M. Hervieu, J.-M. Constantini, and M. Toulemonde, Nucl. Instrum. Methods Phys. Res., Sect. B 122, 449 (1997).Google Scholar
  17. 17.
    F. F. Komarov, Phys. Usp. 46, 1253 (2003).ADSCrossRefGoogle Scholar
  18. 18.
    V. S. Vendamani, S. V. S. Nageswara Rao, and A. P. Pathak, Nucl. Instrum. Methods Phys. Res., Sect. B 315, 188 (2013).Google Scholar
  19. 19.
    P. Mangiagalli, M. Levalois, P. Marie, P. G. Rancoita, and M. Rattagi, Nucl. Phys. B Proc. Suppl. 61B, 464 (1998).ADSCrossRefGoogle Scholar
  20. 20.
    S. Buckley, J. Chiles, A. N. McCaughan, G. Moody, K. L. Silverman, M. J. Stevents, R. P. Mirin, S. W. Nam, and J. M. Shainline, Appl. Phys. Lett. 111, 141101 (2017).ADSCrossRefGoogle Scholar
  21. 21.
    S. Coffa, S. Libertino, and C. Spinella, Appl. Phys. Lett. 76, 321 (2000).ADSCrossRefGoogle Scholar
  22. 22.
    P. K. Giri, Semicond. Sci. Technol. 20, 638 (2005).ADSCrossRefGoogle Scholar
  23. 23.
    V. A. Volodin, V. A. Stuchinsky, S. G. Cherkova, G. A. Kachurin, and R. A. Yankov, ECS Trans. 16, 105 (2009).CrossRefGoogle Scholar

Copyright information

© Pleiades Publishing, Ltd. 2019

Authors and Affiliations

  • S. G. Cherkova
    • 1
    Email author
  • V. A. Skuratov
    • 2
    • 3
    • 4
  • V. A. Volodin
    • 1
    • 5
  1. 1.Institute of Semiconductor Physics, Siberian Branch, Russian Academy of SciencesNovosibirskRussia
  2. 2.Joint Institute for Nuclear ResearchDubnaRussia
  3. 3.National Research Nuclear University “MEPhI”MoscowRussia
  4. 4.Dubna State UniversityDubnaRussia
  5. 5.Novosibirsk State UniversityNovosibirskRussia

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