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Semiconductors

, Volume 53, Issue 9, pp 1234–1237 | Cite as

Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission

  • V. N. Shastin
  • R. Kh. Zhukavin
  • K. A. KovalevskyEmail author
  • V. V. Tsyplenkov
  • V. V. Rumyantsev
  • D. V. Shengurov
  • S. G. Pavlov
  • V. B. Shuman
  • L. M. Portsel
  • A. N. Lodygin
  • Yu. A. Astrov
  • N. V. Abrosimov
  • J. M. Klopf
  • H.-W. Hübers
XXIII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 11–14, 2019
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Abstract

The results of experiments aimed at the observation of split 1s states in Mg-doped Si are reported. From the results, it is possible to determine the chemical shift and exchange interaction energy of a neutral Mg donor in Si. The position of the 1s(E), 1s(T2), and 2s(A1) parastates determines the possibility for attaining population inversion and the specific mechanism of stimulated Raman scattering. The energy of the 1s(T2) parastate is determined from the position of the Fano resonances in the photoconductivity spectrum of Si:Mg at T = 4 K, and the energies of the 1s(T2) and 1s(E) orthostates from the transmittance spectra at elevated temperatures. On the basis of the experimental data, the relaxation rates are estimated, and the possible mechanisms of stimulated emission are analyzed.

Keywords:

neutral double donor magnesium spectroscopy Fano resonance photoconductivity population inversion stimulated Raman scattering 

Notes

ACKNOWLEDGMENTS

The study was carried out with the use of equipment of the Multiple-Access Center, Institute for Physics of Microstructures, Russian Academy of Sciences.

FUNDING

The study was supported by the Russian Foundation for Basic Research, project no. 19-02-00979. The study was carried out in accordance with Russian–German project nos. 389056032 and 18-502-12077-DFG, and government order no. 0035-2019-0020-S-01 for the Institute for Physics of Microstructures, Russian Academy of Sciences, for 2019.

CONFLICT OF INTEREST

The authors declare that they have no conflict of interest.

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Copyright information

© Pleiades Publishing, Ltd. 2019

Authors and Affiliations

  • V. N. Shastin
    • 1
  • R. Kh. Zhukavin
    • 1
  • K. A. Kovalevsky
    • 1
    Email author
  • V. V. Tsyplenkov
    • 1
  • V. V. Rumyantsev
    • 1
  • D. V. Shengurov
    • 1
  • S. G. Pavlov
    • 2
  • V. B. Shuman
    • 3
  • L. M. Portsel
    • 3
  • A. N. Lodygin
    • 3
  • Yu. A. Astrov
    • 3
  • N. V. Abrosimov
    • 4
  • J. M. Klopf
    • 5
  • H.-W. Hübers
    • 2
    • 6
  1. 1.Institute for Physics of Microstructures, Russian Academy of SciencesNizhny NovgorodRussia
  2. 2.Institute of Optical Sensor Systems, German Aerospace Center (DLR)BerlinGermany
  3. 3.Ioffe InstituteSt. PetersburgRussia
  4. 4.Leibniz-Institut für Kristallzüchtung (IKZ)BerlinGermany
  5. 5.Helmholtz-Zentrum Dresden-RossendorfDresdenGermany
  6. 6.Department of Physics, Humboldt-Universität zu BerlinBerlinGermany

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