, Volume 53, Issue 1, pp 132–137 | Cite as

Ellipsometric Method for Measuring the CdTe Buffer-Layer Temperature in the Molecular-Beam Epitaxy of CdHgTe

  • V. A. ShvetsEmail author
  • I. A. Azarov
  • D. V. Marin
  • M. V. Yakushev
  • S. V. Rykhlitsky


An ellipsometric procedure developed for noncontact in situ measurement of the CdTe buffer-layer temperature is presented. The procedure is based on the temperature dependence of the energy position of CdTe critical points and is intended for determining the initial temperature of the growth surface before epitaxy of the cadmium–mercury–telluride compound. An express method for determining the position of critical points by the spectra of ellipsometric parameter Ψ is proposed. A series of calibrated experiments is performed. They result in determination of the temperature dependences of the position of critical points. Estimations and the experiment show that the temperature-measurement accuracy is ±3°C.



  1. 1.
    E. Finkman and S. E. Schacham, J. Appl. Phys. 56, 2896 (1984).ADSCrossRefGoogle Scholar
  2. 2.
    O. A. Gerashchenko, Temperature Measurements, The Handbook (Nauk. Dumka, Kiev, 1989) [in Russian].Google Scholar
  3. 3.
    I. A. Azarov, V. A. Shvets, S. A. Dulin, N. N. Mikhailov, S. A. Dvoretskii, D. G. Ikusov, I. N. Uzhakov, and S. V. Rykhlitskii, Optoelectron., Instrum. Data Process. 53, 630 (2017).ADSCrossRefGoogle Scholar
  4. 4.
    M. Kawano, T. Sasaki, and N. Oda, J. Electron. Mater. 24, 431 (1995).ADSCrossRefGoogle Scholar
  5. 5.
    Z. M. Zhang, B. K. Tsai, and G. Machin, Radiometric Temperature Measurements. II Applications. Experimental Methods in the Physical Sciences (Elsevier, Academic, Amsterdam, Boston, 2010).Google Scholar
  6. 6.
    A. J. Spring Thorpe, S. J. Ingrey, B. Emmerstorfer, and P. Mandeville, Appl. Phys. Lett. 50, 77 (1987).ADSCrossRefGoogle Scholar
  7. 7.
    D. Wahl and M. Mertens, Time-Resolved In-Situ Temperature Measurements Using Band-Edge Absorption Spectroscopy During MBE Growth. Annual Report (Inst. Optoelectron., Ulm Univ., 2010).Google Scholar
  8. 8.
    T. Tomita, T. Kinosada, T. Yamashita, M. Shiota, and T. Sakurai, Jpn. J. Appl. Phys. 25, L925 (1986).ADSCrossRefGoogle Scholar
  9. 9.
    B. Johs, C. M. Herzinger, J. H. Dinan, A. Cornfeld, and J. D. Benson, Thin Solid Films 313–314, 137 (1998).CrossRefGoogle Scholar
  10. 10.
    M. Daraselia, G. Brill, J. W. Garland, V. Nathan, and S. Sivananthan, J. Electron. Mater. 29, 742 (2000).ADSCrossRefGoogle Scholar
  11. 11.
    I. A. Azarov, D. V. Marin, V. A. Shvets, and M. V. Yakushev, in Proceedings of the Russian Conference on Actual Problems of Semiconductor Photoelectronics (Novosibirsk, 2017), p. 119.Google Scholar
  12. 12.
    Yu. G. Sidorov, S. A. Dvoretskii, N. N. Mikhailov, M. V. Yakushev, B. C. Varavin, and A. P. Antsiferov, J. Opt. Technol. 67, 31 (2000).ADSCrossRefGoogle Scholar
  13. 13.
    M. V. Yakushev, D. V. Brunev, V. S. Varavin, V. V. Vasilyev, S. A. Dvoretskii, I. V. Marchishin, A. V. Predein, I. V. Sabinina, Yu. G. Sidorov, and A. V. Sorochkin, Semiconductors 45, 385 (2011).ADSCrossRefGoogle Scholar
  14. 14.
    E. V. Spesivtsev, S. V. Rykhlitskii, and V. A. Shvets, Optoelectron., Instrum. Data Process. 47, 419 (2011).CrossRefGoogle Scholar
  15. 15.
    G. Yu. Sidorov, V. A. Shvets, Yu. G. Sidorov, and V. S. Varavin, Optoelectron., Instrum. Data Process. 53, 617 (2017).ADSCrossRefGoogle Scholar
  16. 16.
    E. V. Spesivtsev, S. V. Rykhlitsky, V. A. Shvets, S. I. Chikichev, A. S. Mardezhov, N. I. Nazarov, and V. A. Volodin, Thin Solid Films 455–456, 700 (2004).CrossRefGoogle Scholar
  17. 17.
    C. C. Kim, M. Daraselia, J. W. Garland, and S. Sivananthan, Phys. Rev. B 56, 4786 (1997).ADSCrossRefGoogle Scholar
  18. 18.
    S. Adachi, T. Kimura, and N. Suzuki, J. Appl. Phys. 74, 3435 (1993).ADSCrossRefGoogle Scholar
  19. 19.
    S. Adachi, Optical Constants of Crystalline and Amorphous Semiconductors: Numerical Data and Graphical Information (Kluwer Academic, Boston, Dresden, London, 1999).CrossRefGoogle Scholar
  20. 20.
    K. K. Svitashev, V. A. Shvets, A. S. Mardezhov, S. A. Dvoretsky, Yu. G. Sidorov, N. N. Mikhailov, E. V. Spesivtsev, and S. V. Rychlitsky, Mater. Sci. Eng. B 44, 162 (1996).Google Scholar

Copyright information

© Pleiades Publishing, Ltd. 2019

Authors and Affiliations

  • V. A. Shvets
    • 1
    • 2
    Email author
  • I. A. Azarov
    • 1
    • 2
  • D. V. Marin
    • 1
  • M. V. Yakushev
    • 1
  • S. V. Rykhlitsky
    • 1
  1. 1.Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of SciencesNovosibirskRussia
  2. 2.Novosibirsk State UniversityNovosibirskRussia

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