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Semiconductors

, Volume 52, Issue 15, pp 1976–1981 | Cite as

Patterns of Variation in the External Quantum Efficiency of InGaN/GaN Green LEDs during Accelerated Tests

  • V. A. SergeevEmail author
  • I. V. Frolov
  • A. A. Shirokov
  • O. A. Radaev
ELEMENTS OF INTEGRAL ELECTRONICS
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Abstract

The causes and mechanisms of variation in the quantum efficiency and other characteristics of InGaN/GaN heterostructures are actively investigated in various operating modes. The results are presented from an experimental study of the variation in the external quantum efficiency of low-power InGaN/GaN green light-emitting diodes with and without a quantum well in the space–charge region (SCR) of the heterostructure in the accelerated test mode. It is found that after 8 hours of testing at a temperature of 300 K in the pulse mode with a pulse amplitude of 0.5 A, a pulse duration of 100 µs, and a duty cycle of 100, the external quantum efficiency grows for all LEDs without a quantum well in the SCR and diminishes for LEDs with a quantum well throughout the range of operating currents. It is shown that at a low level of injection, the intensity of emission of light emitting diodes without a quantum well in the SCR is determined by recombination processes according to the Shockley–Read–Hall mechanism, while that of LEDs with a quantum well is determined by tunneling–recombination processes. Current training of green LEDs based on InGaN/GaN heterostructures in the forced pulse mode for 4 hours can be used as a technological operation for stabilizing their lighting characteristics, and for identifying potentially unreliable products under conditions of mass production.

Keywords:

LED heterostructure quantum well external quantum efficiency radiative and non-radiative recombination lifetime of charge carriers 

Notes

ACKNOWLEDGMENTS

This work was supported by the Russian Foundation for Basic Research, project no. 16-32-60051 mol_a_dk.

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • V. A. Sergeev
    • 1
    • 2
    Email author
  • I. V. Frolov
    • 1
  • A. A. Shirokov
    • 1
  • O. A. Radaev
    • 1
    • 2
  1. 1.Kotel’nikov Institute of Radio Engineering and Electronics, Ulyanovsk Branch, Russian Academy of SciencesUlyanovskRussia
  2. 2.Ulyanovsk State Technical UniversityUlyanovskRussia

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