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Semiconductors

, Volume 52, Issue 14, pp 1817–1821 | Cite as

The Oscillations in ESR Spectra of Mn0.11Hg0.89Te in X- and Q-Bands

  • A.V. Shestakov
  • I. I. Fazlizhanov
  • I. V. Yatsyk
  • M. I. Ibragimova
  • V. A. Shustov
  • N. M. Lyadov
  • R. M. Eremina
INFRARED MICROWAVE PHENOMENA IN NANOSTRUCTURES
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Abstract

The object of the investigation was n-type mercury chalcogenide (Mn0.11Hg0.89Te) monocrystal which was grown by crystallization from a two-phase mixture with replenishment of the melt from a tellurium solution. The investigations of microwave absorption derivative (dP/dH) showed the existence of strong high and low frequency oscillations in the magnetic field in the temperature range 4.2–20 K. The concentration and effective mass of charge carrier were determined from oscillation period and temperature dependence of oscillation amplitude.

Notes

ACKNOWLEDGMENTS

The work is supported within the framework of fundamental research AAAA-A18-118030690040-8 of FRC Kazan Scientific Center of RAS.

REFERENCES

  1. 1.
    A. I. Veynger, A. G. Zabrodskii, T. V. Tisne, et al., Semiconductors 32, 557 (1998).Google Scholar
  2. 2.
    L. Zhu, J. Shao, X. Chen, Y. Li, L. Zhu, Z. Qi, T. Lin, W. Bai, X. Tang, and J. Chu, Phys. Rev. B 94, 155201 (2016).ADSCrossRefGoogle Scholar
  3. 3.
    A. V. Shestakov, I. I. Fazlizhanov, I. V. Yatsyk, I. F. Gilmutdinov, M. I. Ibragimova, V. A. Shustov, and R. M. Eremina, J. Semicond. 39, 052001 (2018).Google Scholar
  4. 4.
    D. A. Andrianov, F. A., Himelfarb, P. I. Kushnir, E. I. Lopatinsky, V. M. Pashkovsky, A. A. Saveliev, and V. I. Fistul, Sov. Phys. Semicond. 10, 66 (1976).Google Scholar
  5. 5.
    A. E. Belyaev, O. P. Gorodnichiy, Yu. G. Semenov, N. In. Shevchenko, O. A. Bodnaruk, and I. M. Rarenko, Sov. Phys. Semicond. 22, 205 (1988).Google Scholar
  6. 6.
    W. Zewen and J. Wanqi, J. Wuhan Univ. Technol.: Mater. Sci. Ed. 30, 923 (2015).Google Scholar
  7. 7.
    A. B. Pipard, Magnetoresistance in Metals (Cambridge Univ. Press, New York, 2009).Google Scholar
  8. 8.
    P. S. Kireev, Physics of Semiconductors (Vysshaya Shkola, Moscow, 1975) [in Russian].Google Scholar
  9. 9.
    N. Popenko, B. Bekirov, I. Ivanchenko, A. Bludov, and V. Pashchenko, JETP Lett. 100, 247 (2014).ADSCrossRefGoogle Scholar
  10. 10.
    H. J. von Bardeleben, Y. Q. Jia, M. O. Manasreh, et al., Appl. Phys. Lett. 62, 90 (1993).ADSCrossRefGoogle Scholar

Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • A.V. Shestakov
    • 1
  • I. I. Fazlizhanov
    • 1
  • I. V. Yatsyk
    • 1
    • 2
  • M. I. Ibragimova
    • 1
  • V. A. Shustov
    • 1
  • N. M. Lyadov
    • 1
  • R. M. Eremina
    • 1
    • 2
  1. 1.Zavoisky Physical-Technical Institute, Federal Research Center “Kazan Scientific Center of RAS”KazanRussia
  2. 2.Physics Institute, Kazan (Volga Region) Federal UniversityKazanRussia

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