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Semiconductors

, Volume 52, Issue 14, pp 1901–1904 | Cite as

Diode Lasers with Near-Surface Active Region

  • A. S. Payusov
  • N. Yu. Gordeev
  • A. A. Serin
  • M. M. Kulagina
  • N. A. Kalyuzhnyy
  • S. A. Mintairov
  • M. V. Maximov
  • A. E. ZhukovEmail author
LASERS AND OPTOELECTRONIC DEVICES
  • 17 Downloads

Abstract

Edge-emitting diode lasers with shallow location of a quantum-well active region at a depth of 0.92 μm were developed and their thermal resistance was evaluated from the analysis of true spontaneous emission spectra through the top contact window. Owing to a close spacing between the active region and laser heatsink, effective heat removal is achieved under continuous wave operation that is characterized by a low value of specific thermal resistance of 6 × 10–3 K/(W cm2).

Notes

ACKNOWLEDGMENTS

The work is supported by the Russian Science Foundation (project 14-42-00006).

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • A. S. Payusov
    • 1
    • 2
  • N. Yu. Gordeev
    • 1
  • A. A. Serin
    • 1
  • M. M. Kulagina
    • 1
  • N. A. Kalyuzhnyy
    • 1
  • S. A. Mintairov
    • 1
  • M. V. Maximov
    • 2
  • A. E. Zhukov
    • 2
    • 3
    Email author
  1. 1.Ioffe instituteSt. PetersburgRussia
  2. 2.St Petersburg National Research Academic UniversitySt. PetersburgRussia
  3. 3.Peter the Great Polytechnic UniversitySt. PetersburgRussia

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