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Semiconductors

, Volume 52, Issue 14, pp 1882–1885 | Cite as

High Quality Graphene Grown by Sublimation on 4H-SiC (0001)

  • A. A. Lebedev
  • V. Yu. DavydovEmail author
  • D. Yu. Usachov
  • S. P. Lebedev
  • A. N. Smirnov
  • I. A. Eliseyev
  • M. S. Dunaevskiy
  • E. V. Gushchina
  • K. A. Bokai
  • J. Pezoldt
GRAPHENE
  • 28 Downloads

Abstract

The structural and electronic characteristics of epitaxial graphene films grown by thermal decomposition of the Si face of a semi-insulating 4H-SiC substrate in an argon environment have been studied by a large set of analytical techniques. It is shown that the results of a complex study make it possible to optimize the growth parameters and develop a reliable technology for the growth of high-quality single-layer graphene films. The charge-carrier concentration in the graphene layer was within 7 × 1011–1 × 1012 cm–2, and the maximum mobility of electrons at room temperature approached 6000 cm2/(V s).

Notes

ACKNOWLEDGMENTS

D.Yu.U. and K.A.B. acknowledge Saint Petersburg State University for research Grant no. 11.65.42.2017 and RFBR (grant no. 17-02-00427). S.P.L. acknowledges support by the Grant for Young Scientists and Postgraduates from the President of the Russian Federation, order no. 1684 of December 30, 2016.

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • A. A. Lebedev
    • 1
  • V. Yu. Davydov
    • 1
    Email author
  • D. Yu. Usachov
    • 2
  • S. P. Lebedev
    • 3
  • A. N. Smirnov
    • 1
  • I. A. Eliseyev
    • 1
  • M. S. Dunaevskiy
    • 1
  • E. V. Gushchina
    • 1
  • K. A. Bokai
    • 2
  • J. Pezoldt
    • 4
  1. 1.Ioffe InstituteSt. PetersburgRussia
  2. 2.Saint Petersburg State UniversitySt. PetersburgRussia
  3. 3.ITMO UniversitySt. PetersburgRussia
  4. 4.Technische Universität IlmenauIlmenauGermany

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