High Quality Graphene Grown by Sublimation on 4H-SiC (0001)
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The structural and electronic characteristics of epitaxial graphene films grown by thermal decomposition of the Si face of a semi-insulating 4H-SiC substrate in an argon environment have been studied by a large set of analytical techniques. It is shown that the results of a complex study make it possible to optimize the growth parameters and develop a reliable technology for the growth of high-quality single-layer graphene films. The charge-carrier concentration in the graphene layer was within 7 × 1011–1 × 1012 cm–2, and the maximum mobility of electrons at room temperature approached 6000 cm2/(V s).
D.Yu.U. and K.A.B. acknowledge Saint Petersburg State University for research Grant no. 184.108.40.2067 and RFBR (grant no. 17-02-00427). S.P.L. acknowledges support by the Grant for Young Scientists and Postgraduates from the President of the Russian Federation, order no. 1684 of December 30, 2016.