Electromechanical Switch Based on InxGa1 –xAs Nanowires
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Piezoresistance effect of the InxGa1 –xAs nanowires was studied by scanning probe microscopy. The effect was investigated by measuring of the I–V curves with simultaneous bending of the nanowire by the probe. A modulation of the conductivity of In0.85Ga0.15As NWs induced by a mechanical stress exceeding three orders of magnitude was observed. For the explanation a model based on the surface states is presented. Such an observation opens new ways for the design of electromechanical switches with record parameters.
The reported study was funded by RFBR according to the Research Project 16-32-60147 mol-a-dk. The nanowire samples were grown under the support of Russian Science Foundation (project no. 14-12-00393).