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Semiconductors

, Volume 52, Issue 13, pp 1672–1676 | Cite as

Conduction-Electron Spin Resonance in HgSe Crystals

  • A. I. Veinger
  • I. V. KochmanEmail author
  • V. I. Okulov
  • M. D. Andriichuk
  • L. D. Paranchich
ELECTRONIC PROPERTIES OF SEMICONDUCTORS
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Abstract

Samples of a gapless HgSe semiconductor with different iron impurity concentrations are investigated. HgSe:Fe samples are examined by the electron-spin-resonance technique. Multiple resonance lines caused by unpaired spins of different origins are analyzed. The properties of electrons localized at shallow impurities are described using a hydrogen-like model. The effect of an internal field on the resonance lines is established. It is found that the conduction of HgSe is not only nonparabolic, but also nonspherical.

Notes

ACKNOWLEDGMENTS

This study was supported in part by the Russian Foundation for Basic Research, project no. 16-02-00352 and the Program 1.4 “Urgent Problems of Low-Temperature Physics” of the Presidium of the Russian Academy of Sciences.

We thank P.V. Semenikhin and D.A. Frolov for help in the experiments and participation in the discussions.

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • A. I. Veinger
    • 1
  • I. V. Kochman
    • 1
  • V. I. Okulov
    • 2
  • M. D. Andriichuk
    • 3
  • L. D. Paranchich
    • 3
  1. 1.Ioffe InstituteSt. PetersburgRussia
  2. 2.Mikheev Institute of Metal Physics, Russian Academy of SciencesYekaterinburgRussia
  3. 3.Chernivtsi National UniversityChernivtsiUkraine

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