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Semiconductors

, Volume 52, Issue 13, pp 1738–1742 | Cite as

Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs

  • S. E. Tyaginov
  • A. A. Makarov
  • B. Kaczer
  • M. Jech
  • A. Chasin
  • A. Grill
  • G. Hellings
  • M. I. VexlerEmail author
  • D. Linten
  • T. Grasser
PHYSICS OF SEMICONDUCTOR DEVICES
  • 54 Downloads

Abstract

The effect of the geometric parameters of Fin field-effect transistors (FinFETs) on hot-carrier degradation (HCD) in these devices is theoretically studied. To this end, a model is used, in which three subproblems constituting the physical phenomenon of HCD are considered: carrier transport in semiconductor structures, description of microscopic defect formation mechanisms, and simulation of degraded device characteristics. An analysis is performed by varying the gate length, fin width and height. It is shown that HCD becomes stronger under fixed stress conditions in transistors with shorter channels or wider fins, while the channel height does not substantially affect HCD. This information can be important for optimizing the architecture of transistors with the fin-shaped channel to suppress degradation effects.

Notes

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • S. E. Tyaginov
    • 1
    • 2
  • A. A. Makarov
    • 1
  • B. Kaczer
    • 3
  • M. Jech
    • 1
  • A. Chasin
    • 3
  • A. Grill
    • 1
  • G. Hellings
    • 3
  • M. I. Vexler
    • 2
    Email author
  • D. Linten
    • 3
  • T. Grasser
    • 1
  1. 1.TU Vienna, Institute for MicroelectronicsViennaAustria
  2. 2.Ioffe InstituteSt. PetersburgRussia
  3. 3.IMECLeuvenBelgium

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