Effect of a por-Si Buffer Layer on the Structure and Morphology of Epitaxial InxGa1 – xN/Si(111) Heterostructures
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Integrated heterostructures exhibiting nanocolumnar morphology of the InxGa1 – xN/Si(111) film are grown on a single-crystal silicon substrate (c-Si(111)) and a substrate with a nanoporous buffer sublayer (por-Si) by molecular-beam epitaxy with the plasma activation of nitrogen. Using a complex of structural and microscopic methods of analysis, it is shown that the growth of InxGa1 – xN nanocolumns on a nanoporous buffer layer offers a number of advantages over growth on c-Si. The por-Si substrate predetermines the preferential orientation of the growth of InxGa1 – xN nanocolumns closer to the Si(111) orientation direction and makes it possible to produce InxGa1 – xN nanocolumns with a higher degree of crystallographic uniformity and with a nanocolumn lateral size of ~40 nm unified over the entire surface. The growth of InxGa1 – xN nanocolumns on a por-Si layer yields a decrease in the strain components εxx and εzz and in the density of edge and screw dislocations compared to the corresponding parameters for InxGa1 – xN nanocolumns grown on c-Si. The InxGa1 – xN nanocolumnar layer fabricated on por-Si exhibits a 20% higher charge-carrier concentration compared to the layer grown on c-Si as well as a higher intensity of the photoluminescence quantum yield (+25%).
The study was supported by the President of the Russian Federation, grant no. MD-188.2017.2.
The part of the study concerned with growth experiments was supported by the Ministry of Education and Science of the Russian Federation, government order no. 16.9789.2017/BCh. The part of the study concerned with controlling the morphology and composition of bulk and porous substrates was supported by Ioffe Institute. The part of the study concerned with diagnostics of the integrated structures was supported by the Ministry of Education and Science of the Russian Federation, government order to institutes of higher education in the field of research activities for 2017–2019, project no. 11.4718.2017/8.9.
We thank the Karlsruhe Nano Micro Facility (NKMF, www.kit.edu/knmf), Forschungszentrum Karlsruhe, for providing access to the equipment at their laboratories.
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