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Semiconductors

, Volume 52, Issue 13, pp 1770–1774 | Cite as

Features of the Selective Growth of GaN Nanorods on Patterned c-Sapphire Substrates of Various Configurations

  • A. N. Semenov
  • D. V. Nechaev
  • S. I. Troshkov
  • A. V. Nashchekin
  • P. N. Brunkov
  • V. N. Jmerik
  • S. V. Ivanov
FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES
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Abstract

The growth features of GaN nanorods on patterned c-sapphire substrates with a regular microcone array having a different density and base diameter in the ranges of (1–5) × 107 cm–2 and 2.5–3.5 μm, respectively, are investigated. The kinetics is studied and the selective-growth regimes are determined for single GaN nanorods with a diameter of 30–100 nm at the vertices of microcones under radically lower growth rates on their slopes. The effect of the configuration of microcones, the substrate temperature, the roughness of the initial surface, and the presence of indium as a surfactant on the degree of growth selectivity is investigated.

Notes

ACKNOWLEDGMENTS

The work was supported by the Russian Scientific Foundation, project no. 14-22-00107. AFM and in part SEM studies were performed with the use of equipment of the Federal Collective-Use Center “Material Science and Diagnostics in Advanced Technologies” supported by the Ministry of Education and Science of the Russian Federation (unique project identifier RFMEFI62117X0018).

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • A. N. Semenov
    • 1
  • D. V. Nechaev
    • 1
  • S. I. Troshkov
    • 1
  • A. V. Nashchekin
    • 1
  • P. N. Brunkov
    • 1
  • V. N. Jmerik
    • 1
  • S. V. Ivanov
    • 1
  1. 1.Ioffe InstituteSt. PetersburgRussia

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