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Semiconductors

, Volume 52, Issue 13, pp 1743–1747 | Cite as

nBn-Photodiode Based on InAsSb/AlAsSb Alloys with a Long-Wavelength Cutoff of 5 μm

  • V. B. KulikovEmail author
  • D. V. Maslov
  • A. R. Sabirov
  • A. A. Solodkov
  • A. L. Dudin
  • N. I. Katsavets
  • I. V. Kogan
  • I. V. Shukov
  • V. P. Chaly
PHYSICS OF SEMICONDUCTOR DEVICES
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Abstract

The results of studying the photoelectric characteristics of an nBn structure are presented. The photodiodes based on such structures may have a cutoff wavelength as high as 5 μm. Calculations based on these results show that such photodiodes have a threshold photosensitivity comparable with that of traditional analogs. An energy band diagram of the nBn structure is proposed based on experimental results and theoretical estimations; this diagram makes it possible to estimate the effect of potential barriers in the valence band of the wide-gap layer and at its boundaries with narrow-gap layers on the nBn-based photodiode sensitivity. The experimental results of studying the dependence of the photocurrent thermal-activation energy on the photodiode bias turned out to be important for developing the model.

Notes

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • V. B. Kulikov
    • 1
    Email author
  • D. V. Maslov
    • 1
  • A. R. Sabirov
    • 1
  • A. A. Solodkov
    • 1
  • A. L. Dudin
    • 2
  • N. I. Katsavets
    • 2
  • I. V. Kogan
    • 2
  • I. V. Shukov
    • 2
  • V. P. Chaly
    • 2
  1. 1.JSC Central Scientific-Research Institute “Cyclone”MoscowRussia
  2. 2.JSC Svetlana-RostSt. PetersburgRussia

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