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Semiconductors

, Volume 52, Issue 12, pp 1586–1589 | Cite as

Bipolar Persistent Photoconductivity in HgTe/CdHgTe (013) Double Quantum-Well Heterostructures

  • K. E. SpirinEmail author
  • D. M. Gaponova
  • K. V. Marem’yanin
  • V. V. Rumyantsev
  • V. I. Gavrilenko
  • N. N. Mikhailov
  • S. A. Dvoretsky
XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018

Abstract

The effects of the residual photoconductivity in HgTe/CdHgTe (013) double quantum-well heterostructures are studied at T = 4.2 K. It is shown that the residual photoconductivity in this system has a bipolar character, i.e., both positive and negative persistent photoconductivity is present depending on the illumination wavelength.

Notes

ACKNOWLEDGMENTS

This work was performed in the scope of fulfillment of the state order of the Institute for Physics of Microstructures of the Russian Academy of Sciences, theme 0035-2014-0201, and partially supported by the Russian Foundation for Basic Research, project no. 16-02-00672. The characterization and refinement of the structural parameters are performed under the support of the Presidential Grant of the Russian Federation for the State Support of Young Russian Scientists—Candidates of Science, project MK-4399.2018.2. The equipment of the Joint Usage Center of the Institute for Physics of Microstructures of the Russian Academy of Sciences is used in the work.

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • K. E. Spirin
    • 1
    Email author
  • D. M. Gaponova
    • 1
  • K. V. Marem’yanin
    • 1
  • V. V. Rumyantsev
    • 1
  • V. I. Gavrilenko
    • 1
  • N. N. Mikhailov
    • 2
  • S. A. Dvoretsky
    • 2
  1. 1.Institute for Physics of Microstructures, Russian Academy of SciencesNizhny NovgorodRussia
  2. 2.Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of SciencesNovosibirskRussia

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