Skip to main content
SpringerLink
Log in

Application of the Locally Nonequilibrium Diffusion-Drift Cattaneo–Vernotte Model to the Calculation of Photocurrent Relaxation in Diode Structures under Subpicosecond Pulses of Ionizing Radiation

  • XXII INTERNATIONAL SYMPOSIUM “NANOPHYSICS AND NANOELECTRONICS”, NIZHNY NOVGOROD, MARCH 12–15, 2018
  • Published:
Semiconductors Aims and scope Submit manuscript

Abstract

The excitation-relaxation process in electron–hole plasma upon exposure to ionizing radiation for a time shorter than the relaxation time of the mobile carrier energy and momentum is considered. By the example of the calculation of transient ionization processes in a silicon hyperhigh-frequency Schottky diode, local-equilibrium and local-nonequilibrium carrier transport models are compared. It is shown that the local-nonequilibrium model features a wider field of application for describing fast relaxation processes.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1.
Fig. 2.
Fig. 3.

Similar content being viewed by others

REFERENCES

  1. R. Jones, A. M. Chugg, C. M. S. Jones, P. H. Duncan, C. S. Dyer, and C. Sanderson, IEEE Trans. Nucl. Sci. 47, 539 (2000).

    Article  ADS  Google Scholar 

  2. A. I. Chumakov, A. N. Egorov, O. B. Mavritskii, and A. V. Yanenko, Russ. Microelectron. 33, 106 (2004).

    Article  Google Scholar 

  3. M. Sakhno, A. Golenkov, and F. Sizov, J. Appl. Phys. 114, 164503 (2013).

    Article  ADS  Google Scholar 

  4. P. Vernotte, C.R. Acad. Sci. Paris 246, 3154 (1958).

    Google Scholar 

  5. C. Cattaneo, C.R. Acad. Sci. Paris 247, 431 (1958).

    Google Scholar 

  6. D. Jou, J. Casas-Vazquez, and G. Lebon, Extended Irreversible Thermodynamics (Spinger, Berlin, Heidelberg, 2010).

  7. W. Shockley, Bell Syst. Technol. J. 28, 435 (1949).

    Article  Google Scholar 

  8. L. Onsager, Phys. Rev. 37, 405 (1931).

    Article  ADS  Google Scholar 

  9. L. Onsager, Phys. Rev. 38, 2265 (1931).

    Article  ADS  Google Scholar 

  10. K. V. Zhukovskii, Uch. Zap. Fiz. Fak. MGU, No. 6, 1740301 (2017).

    Google Scholar 

  11. M. Yu. Belevich, Uch. Zap. Ross. Gos. Gidrometeorol. Univ. 10, 101 (2009).

    Google Scholar 

  12. S. L. Sobolev, Sov. Phys. Usp. 34, 218 (1991).

    Article  ADS  Google Scholar 

  13. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).

    Google Scholar 

  14. R. Stratton, Phys. Rev. 126, 2002 (1962).

    Article  ADS  Google Scholar 

  15. K. Blotekjaer, IEEE Trans. Electron Dev. 17, 38 (1970).

    Article  ADS  Google Scholar 

  16. A. V. Lykov, Theory of Heat Conductivity (Vyssh. Shkola, Moscow, 1967) [in Russian].

    Google Scholar 

  17. M. Lundstrom, Fundamentals of Carrier Transport (Cambridge Univ. Press, Cambridge, 2000).

    Book  Google Scholar 

  18. F. Ekoue, A. Fouache d’Halloy, D. Gigon, G. Plantamp, and E. Zajdman, Int. J. Phys. Math. Sci. 7, 772 (2013).

    Google Scholar 

  19. V. K. Kiselev, S. V. Obolenskii, A. S. Puzanov, and A. V. Skupov, Zh. Radiotekh. 17 (2), 10 (2014).

  20. R. A. Guyer and J. A. Krumhansl, Phys. Rev. 148, 766 (1966).

    Article  ADS  Google Scholar 

  21. R. A. Guyer and J. A. Krumhansl, Phys. Rev. 148, 778 (1966).

    Article  ADS  Google Scholar 

Download references

ACKNOWLEDGMENTS

This study was supported by the Russian Foundation for Basic Research, project no. 15-02-07935 and programs of the Russian Academy of Sciences.

Author information

Authors and Affiliations

  1. Lobachevsky State University of Nizhny Novgorod, 603600, Nizhny Novgorod, Russia

    A. S. Puzanov, S. V. Obolenskiy & V. A. Kozlov

  2. Institute for Physics of Microstructures, Russian Academy of Sciences, 607680, Nizhny Novgorod, Russia

    V. A. Kozlov

Authors
  1. A. S. Puzanov
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. S. V. Obolenskiy
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. V. A. Kozlov
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to A. S. Puzanov.

Additional information

Translated by A. Kazantsev

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Puzanov, A.S., Obolenskiy, S.V. & Kozlov, V.A. Application of the Locally Nonequilibrium Diffusion-Drift Cattaneo–Vernotte Model to the Calculation of Photocurrent Relaxation in Diode Structures under Subpicosecond Pulses of Ionizing Radiation. Semiconductors 52, 1407–1411 (2018). https://doi.org/10.1134/S1063782618110209

Download citation

  • Received:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1063782618110209

Keywords

Search

Navigation