Effect of Deep Centers on the Statistical Delay of Microplasma Breakdown in Gallium-Arsenide Light-Emitting Diodes
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A statistical study of the microplasma-breakdown delay in gallium-arsenide light-emitting diodes is performed. The significant effect of deep centers on the microplasma breakdown of gallium arsenide p–n junctions is detected. It is shown that the statistical delay of the microplasma breakdown makes it possible to estimate the energy spectrum of deep levels in the microplasma channel when varying the charge state of deep centers by decreasing the reverse voltage applied to the p–n junction. In the temperature range of 250–350 K, the effect of three deep levels is detected and their parameters are determined.
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- 1.I. V. Grekhov and Yu. N. Serezhkin, Avalanche Breakdown of p-n Junction in Semiconductors (Energiya, Leningrad, 1980) [in Russian].Google Scholar
- 3.M. W. Nield and J. H. Leck, J. Appl. Phys. 18, 185 (1967).Google Scholar
- 8.A. S. Kyuregyan and Yu. N. Serezhkin, Sov. Phys. Semicond. 15, 392 (1981).Google Scholar