Semiconductors

, Volume 52, Issue 5, pp 628–631 | Cite as

New Method of Porous Ge Layer Fabrication: Structure and Optical Properties

  • E. B. Gorokhov
  • K. N. Astankova
  • I. A. Azarov
  • V. A. Volodin
  • A. V. Latyshev
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Technology
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Abstract

Porous germanium films were produced by selective removal of the GeO2 matrix from the GeO2<Ge–NCs> heterolayer in deionized water or HF. On the basis of Raman and infrared spectroscopy data it was supposed that a stable skeletal framework from agglomerated Ge nanoparticles (amorphous or crystalline) was formed after the selective etching of GeO2<Ge–NCs> heterolayers. The kinetics of air oxidation of amorphous porous Ge layers was investigated by scanning ellipsometry. Spectral ellipsometry allowed estimating the porosity of amorphous and crystalline porous Ge layers, which was ~70 and ~80%, respectively.

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • E. B. Gorokhov
    • 1
  • K. N. Astankova
    • 1
  • I. A. Azarov
    • 1
    • 2
  • V. A. Volodin
    • 1
    • 2
  • A. V. Latyshev
    • 1
    • 2
  1. 1.Institute of Semiconductor Physics SB Russian Academy of SciencesNovosibirskRussia
  2. 2.Novosibirsk State UniversityNovosibirskRussia

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