Semiconductors

, Volume 52, Issue 5, pp 612–614 | Cite as

Dielectric Properties of Oligonucleotides on the Surface of Si Nanosandwich Structures

  • M. A. Fomin
  • A. L. Chernev
  • N. T. Bagraev
  • L. E. Klyachkin
  • A. K. Emelyanov
  • M. V. Dubina
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Characterization

Abstract

Planar silicon nanostructures that are formed as a very narrow silicon quantum well confined by delta-barriers heavily doped with boron are used to study the dielectric properties of DNA oligonucleotides deposited onto the surface of the nanostructures. The capacitance characteristics of the silicon nanostructures with oligonucleotides deposited onto their surface are determined by recording the local tunneling current- voltage characteristics by means of scanning tunneling microscopy. The results show the possibility of identifying the local dielectric properties of DNA oligonucleotide segments consisting of repeating G–C pairs. These properties apparently give grounds to correlate the segments with polymer molecules exhibiting the properties of multiferroics.

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Copyright information

© Pleiades Publishing, Ltd. 2018

Authors and Affiliations

  • M. A. Fomin
    • 1
  • A. L. Chernev
    • 2
  • N. T. Bagraev
    • 3
  • L. E. Klyachkin
    • 3
  • A. K. Emelyanov
    • 2
  • M. V. Dubina
    • 2
  1. 1.Peter the Great St. Petersburg Polytechnic UniversitySt. PetersburgRussia
  2. 2.St. Petersburg Academic University Nanotechnology Research and Education Centre RASSt. PetersburgRussia
  3. 3.Ioffe InstituteSt. PetersburgRussia

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