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Semiconductors

, Volume 51, Issue 3, pp 310–317 | Cite as

Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates

  • G. B. GalievEmail author
  • M. M. Grekhov
  • G. Kh. Kitaeva
  • E. A. Klimov
  • A. N. Klochkov
  • O. S. Kolentsova
  • V. V. Kornienko
  • K. A. Kuznetsov
  • P. P. Maltsev
  • S. S. Pushkarev
Spectroscopy, Interaction with Radiation

Abstract

The spectrum and waveforms of broadband terahertz-radiation pulses generated by low-temperature In0.53Ga0.47As epitaxial films under femtosecond laser pumping are investigated by terahertz time-resolved spectroscopy. The In0.53Ga0.47As films are fabricated by molecular-beam epitaxy at a temperature of 200°C under different arsenic pressures on (100)-oriented InP substrates and, for the first time, on (411)A InP substrates. The surface morphology of the samples is studied by atomic-force microscopy and the structural quality is established by high-resolution X-ray diffraction analysis. It is found that the amplitude of terahertz radiation from the LT-InGaAs layers on the (411)A InP substrates exceeds that from similar layers formed on the (100) InP substrates by a factor of 3–5.

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Copyright information

© Pleiades Publishing, Ltd. 2017

Authors and Affiliations

  • G. B. Galiev
    • 1
    Email author
  • M. M. Grekhov
    • 3
  • G. Kh. Kitaeva
    • 2
  • E. A. Klimov
    • 1
  • A. N. Klochkov
    • 1
  • O. S. Kolentsova
    • 3
  • V. V. Kornienko
    • 2
  • K. A. Kuznetsov
    • 2
  • P. P. Maltsev
    • 1
  • S. S. Pushkarev
    • 1
  1. 1.Institute of Ultra-High Frequency Semiconductor ElectronicsRussian Academy of SciencesMoscowRussia
  2. 2.Faculty of PhysicsMoscow State UniversityMoscowRussia
  3. 3.National Research Nuclear University “MEPhI”MoscowRussia

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