On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire
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Abstract
The intense absorption of CO2 laser radiation in sapphire is used to separate GaN films from GaN templates on sapphire. Scanning of the sapphire substrate by the laser leads to the thermal dissociation of GaN at the GaN/sapphire interface and to the detachment of GaN films from the sapphire. The threshold density of the laser energy at which n-GaN started to dissociate is 1.6 ± 0.5 J/cm2. The mechanical-stress distribution and the surface morphology of GaN films and sapphire substrates before and after laser lift-off are studied by Raman spectroscopy, atomic-force microscopy, and scanning electron microscopy. A vertical Schottky diode with a forward current density of 100 A/cm2 at a voltage of 2 V and a maximum reverse voltage of 150 V is fabricated on the basis of a 9-μm-thick detached n-GaN film.
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References
- 1.M. V. Virko, V. S. Kogotkov, A. A. Leonidov, V. V. Voronenkov, Yu. T. Rebane, A. S. Zubrilov, R. I. Gorbunov, F. E. Latyshev, N. I. Bochkareva, Yu.S. Lelikov, D. V. Tarkhin, A. N. Smirnov, V. Yu. Davydov, and Yu. G. Shreter, Semiconductors 50, 699 (2016).ADSCrossRefGoogle Scholar
- 2.H. Goto, S. W. Lee, H. J. Lee, H.-J. Lee, J. S. Ha, M. W. Cho, and T. Yao, Phys. Status Solidi C, 5, 1659 (2008).ADSCrossRefGoogle Scholar
- 3.X. A. Cao and S. D. Arthur, Appl. Phys. Lett., 85, 3971 (2004).ADSCrossRefGoogle Scholar
- 4.M. K. Kelly, O. Ambacher, R. Dimitrov, R. Handschuh, and M. Stutzmann, Phys. Status Solidi A 159, R3 (1997).ADSCrossRefGoogle Scholar
- 5.W. S. Wong, T. Sands, and N. W. Cheung, Appl. Phys. Lett., 72, 599 (1998).ADSCrossRefGoogle Scholar
- 6.M. E. Whitson, Handbook of the Infrared Optical Properties of Al2O3, Carbon, MgO and ZrO2 (Aerospace Corp., CA, 1975), Vol. 1, Chap. I-1, p. I.Google Scholar
- 7.P. R. Tavernier and D. R. Clarke, J Appl. Phys., 89, 1527 (2001).Google Scholar
- 8.V. Voronenkov, R. Gorbunov, A. Tsyuk, P. Latyshev, Y. Lelikov, Y. Rebane, A. Zubrilov, N. Bochkareva, and Y. Shreter, ECS Trans. 35 (6), 91 (2011).CrossRefGoogle Scholar
- 9.X. J. Su, K. Xu, Y. Xu, G. Q. Ren, J. C. Zhang, J. F. Wang, and H. Yang, J. Phys. D: Appl. Phys., 46, 205103 (2013).ADSCrossRefGoogle Scholar
- 10.V. Yu. Davydov, N. S. Averkiev, I. N. Goncharuk, D.K. Nelson, I. P. Nikitina, A. S. Polkovnikov, A. N. Smirnov, M. A. Jacobson, and O. K. Semchinova, J. Appl. Phys., 82, 5097 (1997).ADSCrossRefGoogle Scholar
- 11.V. Yu. Davydov, Yu. E. Kitaev, I. N. Goncharuk, A. N. Smirnov, J. Graul, O. Semchinova, D. Uffmann, M. B. Smirnov, A. P. Mirgorodsky, and R. A. Evarestov, Phys. Rev. B, 58, 12899 (1998).ADSCrossRefGoogle Scholar
- 12.N. Przhevalskii, S. Yu. Karpov, and Yu. N. Makarov, MRS Internet J. Nitride Semicond. Res., 3, 30 (1998).CrossRefGoogle Scholar
- 13.N. Tanaka, K. Hasegawa, K. Yasunishi, N. Murakami, and T. Oka, Appl. Phys. Express, 8, 071001 (2015).ADSCrossRefGoogle Scholar
- 14.M. Ueno, S. Yoshimoto, K. Ishihara, M. Okada, K. Sumiyoshi, H. Hirano, F. Mitsuhashi, Y. Yoshizumi, T. Ishizuka, and M. Kiyama, in Proceedings of the 26th IEEE Power Semiconductor Devices and IC’s ISPSD Conference, Waikoloa, USA, 2014, p. 309.Google Scholar
- 15.Yu. G. Shreter, Yu. T. Rebane, and A. V. Mironov, US Patent Application No. 20140206178 (2014).Google Scholar