Semiconductors

, Volume 51, Issue 1, pp 38–42 | Cite as

Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells

  • S. S. Krishtopenko
  • A. V. Ikonnikov
  • K. V. Maremyanin
  • L. S. Bovkun
  • K. E. Spirin
  • A. M. Kadykov
  • M. Marcinkiewicz
  • S. Ruffenach
  • C. Consejo
  • F. Teppe
  • W. Knap
  • B. R. Semyagin
  • M. A. Putyato
  • E. A. Emelyanov
  • V. V. Preobrazhenskii
  • V. I. Gavrilenko
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
  • 36 Downloads

Abstract

The band structure of three-layer symmetric InAs/GaSb/InAs quantum wells confined between AlSb barriers is analyzed theoretically. It is shown that, depending on the thicknesses of the InAs and GaSb layers, a normal band structure, a gapless state with a Dirac cone at the center of the Brillouin zone, or inverted band structure (two-dimensional topological insulator) can be realized in this system. Measurements of the cyclotron resonance in structures with gapless band spectra carried out for different electron concentrations confirm the existence of massless Dirac fermions in InAs/GaSb/InAs quantum wells.

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References

  1. 1.
    A. H. Castro Neto, F. Guinea, N. M. R. Peres, K. S. Novoselov, and A. K. Geim, Rev. Mod. Phys., 81, 110 (2009).ADSCrossRefGoogle Scholar
  2. 2.
    M. Z. Hasan and C. L. Kane, Rev. Mod. Phys., 82, 3405 (2010).CrossRefGoogle Scholar
  3. 3.
    X.-L. Qi, and S.-C. Zhang, Rev. Mod. Phys., 83, 1057 (2011).ADSCrossRefGoogle Scholar
  4. 4.
    B. Büttner, C. X. Liu, G. Tkachov, E. G. Novik, C. Brüne, H. Buhmann, E. M. Hankiewicz, P. Recher, B. Trauzettel, S. C. Zhang, and L. W. Molenkamp, Nat. Phys., 7, 418 (2011).CrossRefGoogle Scholar
  5. 5.
    M. Zholudev, F. Teppe, M. Orlita, C. Consejo, J. Torres, N. Dyakonova, M. Czapkiewicz, J. Wrbel, G. Grabecki, N. Mikhailov, S. Dvoretskii, A. Ikonnikov, K. Spirin, V. Aleshkin, V. Gavrilenko, and W. Knap, Phys. Rev. B, 86, 205420 (2012).ADSCrossRefGoogle Scholar
  6. 6.
    B. A. Bernevig, T. L. Hughes, and S.-C. Zhang, Science, 314, 1757 (2006).ADSCrossRefGoogle Scholar
  7. 7.
    M. Konig, S. Wiedmann, C. Brune, A. Roth, H. Buhmann, L. W. Molenkamp, X.-L. Qi, and S.-C. Zhang, Science, 318, 766 (2007).ADSCrossRefGoogle Scholar
  8. 8.
    C. Liu, T. L. Hughes, X.-L. Qi, K. Wang, and S.-C. Zhang, Phys. Rev. Lett., 100, 236601 (2008).ADSCrossRefGoogle Scholar
  9. 9.
    I. Knez, R.-R. Du, and G. Sullivan, Phys. Rev. Lett., 107, 136603 (2011).ADSCrossRefGoogle Scholar
  10. 10.
    E. G. Novik, A. Pfeuffer-Jeschke, T. Jungwirth, V. Latussek, C. R. Becker, G. Landwehr, H. Buhmann, and L. W. Molenkamp, Phys. Rev. B, 72, 035321 (2005).ADSCrossRefGoogle Scholar
  11. 11.
    S. S. Krishtopenko, A. V. Ikonnikov, K. V. Maremyanin, K. E. Spirin, V. I. Gavrilenko, Yu. G. Sadofyev, M. Goiran, M. Sadowsky, and Yu. B. Vasilyev, J. Appl. Phys. 111, 093711 (2012).ADSCrossRefGoogle Scholar
  12. 12.
    S. S. Krishtopenko, A. V. Ikonnikov, M. Orlita, Yu. G. Sadofyev, M. Goiran, F. Teppe, W. Knap, and V. I. Gavrilenko, J. Appl. Phys. 117, 112813 (2015).ADSCrossRefGoogle Scholar
  13. 13.
    I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, J. Appl. Phys., 89, 5815 (2001).ADSCrossRefGoogle Scholar
  14. 14.
    E. A. Emel’yanov, D. F. Feklin, A. V. Vasev, M.A. Putyato, B. R. Semyagin, A. P. Vasilenko, O. P. Pchelyakov, and V. V. Preobrazhenskii, Optoelectron., Instrum. Data Process. 47, 452 (2011).CrossRefGoogle Scholar
  15. 15.
    E. A. Emel’yanov, D. F. Feklin, A. V. Vasev, M. A. Putyato, B. R. Semyagin, I. B. Chistokhin, A. K. Gutakovskii, A. P. Vasilenko, O. P. Pchelyakov, and V. V. Preobrazhenskii, in Anniversary Collection of Selected Works of Inst. Semiconductor Physics of Siberian Branch of RAS (1964–2014) (Parallel’, Novosibirsk, 2014), p. 336 [in Russian].Google Scholar
  16. 16.
    Yu. G. Sadofyev, A. Ramamoorthy, B. Naser, J. P. Bird, S. R. Jonson, and Y.-H. Zhang, Appl. Phys. Lett., 81, 1833 (2002).ADSCrossRefGoogle Scholar
  17. 17.
    A. V. Ikonnikov, A. V. Antonov, A. A. Lastovkin, V. I. Gavrilenko, Yu. G. Sadof’ev, and N. Samal, Semiconductors 44, 1467 (2010).ADSCrossRefGoogle Scholar

Copyright information

© Pleiades Publishing, Ltd. 2017

Authors and Affiliations

  • S. S. Krishtopenko
    • 1
    • 3
  • A. V. Ikonnikov
    • 1
    • 2
  • K. V. Maremyanin
    • 1
    • 2
  • L. S. Bovkun
    • 1
  • K. E. Spirin
    • 1
  • A. M. Kadykov
    • 1
    • 3
  • M. Marcinkiewicz
    • 3
  • S. Ruffenach
    • 3
  • C. Consejo
    • 3
  • F. Teppe
    • 3
  • W. Knap
    • 3
  • B. R. Semyagin
    • 4
  • M. A. Putyato
    • 4
  • E. A. Emelyanov
    • 4
  • V. V. Preobrazhenskii
    • 4
  • V. I. Gavrilenko
    • 1
    • 2
  1. 1.Institute for Physics of MicrostructuresRussian Academy of SciencesNizhny NovgorodRussia
  2. 2.Lobachevsky State University of Nizhny NovgorodNizhny NovgorodRussia
  3. 3.Laboratoire Charles Coulomb (L2C), UMR CNRS 5221Universite MontpellierMontpellierFrance
  4. 4.Rzhanov Institute of Semiconductor Physics, Siberian BranchRussian Academy of SciencesNovosibirskRussia

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