Semiconductors

, Volume 50, Issue 12, pp 1566–1568 | Cite as

On a new method of heterojunction formation in III–V nanowires

  • N. V. Sibirev
  • A. A. Koryakin
  • V. G. Dubrovskii
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
  • 29 Downloads

Abstract

The process of the formation of axial heterostructures in nanowires is considered on the basis of the vapor–liquid–solid model of growth. A new method of heterostructure formation in (Al, Ga)As nanowires by varying the arsenic flux is proposed.

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Copyright information

© Pleiades Publishing, Ltd. 2016

Authors and Affiliations

  • N. V. Sibirev
    • 1
    • 2
  • A. A. Koryakin
    • 1
    • 2
  • V. G. Dubrovskii
    • 1
    • 3
    • 4
    • 5
  1. 1.St. Petersburg National Research Academic University—Nanotechnology Research and Education CenterRussian Academy of SciencesSt. PetersburgRussia
  2. 2.St. Petersburg State Polytechnic UniversitySt. PetersburgRussia
  3. 3.St. Petersburg National Research University of Information Technologies, Mechanics, and OpticsSt. PetersburgRussia
  4. 4.St. Petersburg State UniversitySt. PetersburgRussia
  5. 5.Ioffe Physical–Technical InstituteRussian Academy of SciencesSt. PetersburgRussia

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