Surface passivation of GaAs nanowires by the atomic layer deposition of AlN
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It is shown that the atomic layer deposition of thin AlN layers can be used to passivate the surface states of GaAs nanowires synthesized by molecular-beam epitaxy. Studies of the optical properties of samples by low-temperature photoluminescence measurements shows that the photoluminescence-signal intensity can be increased by a factor of up to five by passivating the nanowires with a 25-Å-thick AlN layer.
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- 2.B. I. Bednyi, Soros. Obrazov. Zh. 7, 114 (1998).Google Scholar