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Semiconductors

, Volume 50, Issue 9, pp 1261–1272 | Cite as

Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates

  • P. V. SeredinEmail author
  • D. L. Goloshchapov
  • A. S. Lenshin
  • A. N. Lukin
  • A. V. Fedyukin
  • I. N. Arsentyev
  • A. D. Bondarev
  • Y. V. Lubyanskiy
  • I. S. Tarasov
Fabrication, Treatment, and Testing of Materials and Structures
  • 33 Downloads

Abstract

Nanostructured aluminum-nitride films are formed by reactive ion-plasma sputtering onto GaAs substrates with different orientations. The properties of the films are studied via structural analysis, atomic force microscopy, and infrared and visible–ultraviolet spectroscopy. The aluminum-nitride films can have a refractive index in the range of 1.6–4.0 at a wavelength of ~250 nm and an optical band gap of ~5 eV. It is shown that the morphology, surface composition, and optical characteristics of AlN/GaAs heterophase systems can be controlled using misoriented GaAs substrates.

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Copyright information

© Pleiades Publishing, Ltd. 2016

Authors and Affiliations

  • P. V. Seredin
    • 1
    Email author
  • D. L. Goloshchapov
    • 1
  • A. S. Lenshin
    • 1
  • A. N. Lukin
    • 1
  • A. V. Fedyukin
    • 1
  • I. N. Arsentyev
    • 2
  • A. D. Bondarev
    • 2
  • Y. V. Lubyanskiy
    • 2
  • I. S. Tarasov
    • 2
  1. 1.Vozonezh State UniversityVoronezhRussia
  2. 2.Ioffe Physical-Technical InstituteRussian Academy of SciencesSt. PetersburgRussia

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