Advertisement

Semiconductors

, Volume 50, Issue 7, pp 980–983 | Cite as

Chloride epitaxy of β-Ga2O3 layers grown on c-sapphire substrates

  • V. I. Nikolaev
  • A. I. Pechnikov
  • S. I. Stepanov
  • Sh. Sh. Sharofidinov
  • A. A. Golovatenko
  • I. P. Nikitina
  • A. N. Smirnov
  • V. E. Bugrov
  • A. E. Romanov
  • P. N. Brunkov
  • D. A. Kirilenko
Fabrication, Treatment, and Testing of Materials and Structures
  • 78 Downloads

Abstract

The method of chloride epitaxy is employed to grow β-Ga2O3 epitaxial layers on a c-sapphire substrate. Purified dry air is used as the source of oxygen. The layers are studied using the methods of X-ray diffraction, optical microscopy, scanning electron microscopy, transmission electron microscopy, and micro-Raman spectroscopy. It is found that the growth plane of the layers is (\(\bar 2\)01), parallel to the substrate surface. The layers consist of separate large crystalline grains of three different in-plane orientations rotated relative to each other in the growth plane by 60°. Misorientation can be caused by the different symmetry of the substrate and the epitaxial layer.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    M. Higashiwaki, K. Sasaki, A. Kuramata, T. Masui, and S. Yamakoshi, Appl. Phys. Lett. 100, 013504 (2012).ADSCrossRefGoogle Scholar
  2. 2.
    T. Oshima, N. Arai, N. Suzuki, S. Ohira, and S. Fujita, Thin Solid Films 516, 5768 (2008).ADSCrossRefGoogle Scholar
  3. 3.
    K. Sasaki, M. Higashiwaki, A. Kuramata, T. Masui, and S. Yamakoshi, J. Cryst. Growth 378, 591 (2013).ADSCrossRefGoogle Scholar
  4. 4.
    K. Sasaki, A. Kuramata, T. Masui, E. G. Víllora, K. Shimamura, and S. Yamakoshi, Appl. Phys. Express 5, 035502 (2012).ADSCrossRefGoogle Scholar
  5. 5.
    E. G. Víllora, K. Shimamura, K. Kitamura, and K. Aoki, Appl. Phys. Lett. 88, 031105 (2006).ADSCrossRefGoogle Scholar
  6. 6.
    H. Okumura, M. Kita, K. Sasaki, A. Kuramata, M. Higashiwaki, and J. S. Speck, Appl. Phys. Express 7, 095501 (2014).ADSCrossRefGoogle Scholar
  7. 7.
    W. Mi, C. Luan, Z. Li, C. Zhao, X. Feng, and J. Ma, Opt. Mater. 35, 2624 (2013).ADSCrossRefGoogle Scholar
  8. 8.
    P. Ravadgar, R. H. Horng, and T. Y. Wang, ECS J. Solid State Sci. Technol. 1, N58 (2012).CrossRefGoogle Scholar
  9. 9.
    D. Gogova, G. Wagner, M. Baldini, M. Schmidbauer, K. Irmscher, R. Schewski, Z. Galazka, M. Albrecht, and R. Fornari, J. Cryst. Growth 401, 665 (2014).CrossRefGoogle Scholar
  10. 10.
    G. Wagner, M. Baldini, D. Gogova, M. Schmidbauer, R. Schewski, M. Albrecht, Z. Galazka, D. Klimm, and R. Fornari, Phys. Status Solidi A 211, 27 (2014).CrossRefGoogle Scholar
  11. 11.
    D. J. Comstock and J. W. Elam, Chem. Mater. 24, 4011 (2012).CrossRefGoogle Scholar
  12. 12.
    T. Matsumoto, M. Aoki, A. Kinoshita, and T. Aono, Jpn. J. Appl. Phys. 13, 1578 (1974).ADSCrossRefGoogle Scholar
  13. 13.
    H. Murakami, K. Nomura, K. Goto, K. Sasaki, K. Kawara, Q. T. Thieg, et al., Appl. Phys. Express 8, 015503 (2015).ADSCrossRefGoogle Scholar
  14. 14.
    Y. Oshima, E. G. Víllora, and K. Shimamura, J. Cryst. Growth 410, 53 (2015).ADSCrossRefGoogle Scholar
  15. 15.
    Y. Oshima, E. G. Víllora, Y. Matsushita, S. Yamamoto, and K. Shimamura, J. Appl. Phys. 118, 085301 (2015).ADSCrossRefGoogle Scholar
  16. 16.
    Y. Oshima, E. G. Víllora, and K. Shimamura, Appl. Phys. Express 8, 055501 (2015).ADSCrossRefGoogle Scholar
  17. 17.
    R. Rao, A. M. Rao, B. Xu, J. Dong, S. Sharma, and M. K. Sunkara, J. Appl. Phys. 98, 1 (2005).Google Scholar
  18. 18.
    A. Khan, S. N. Khan, W. M. Jadwisienczak, and M. E. Kordesch, Sci. Adv. Mater. 1, 236 (2009).CrossRefGoogle Scholar
  19. 19.
    T. Onuma, S. Fujioka, T. Yamaguchi, Y. Itoh, M. Higashiwaki, K. Sasaki, T. Masui, and T. Honda, J. Cryst. Growth 401, 330 (2014).CrossRefGoogle Scholar

Copyright information

© Pleiades Publishing, Ltd. 2016

Authors and Affiliations

  • V. I. Nikolaev
    • 1
    • 2
    • 3
  • A. I. Pechnikov
    • 1
    • 2
  • S. I. Stepanov
    • 2
    • 4
  • Sh. Sh. Sharofidinov
    • 2
    • 3
  • A. A. Golovatenko
    • 1
    • 2
    • 3
  • I. P. Nikitina
    • 3
  • A. N. Smirnov
    • 3
  • V. E. Bugrov
    • 2
  • A. E. Romanov
    • 2
    • 3
  • P. N. Brunkov
    • 2
    • 3
  • D. A. Kirilenko
    • 2
    • 3
  1. 1.Perfect Crystals LLCSt. PetersburgRussia
  2. 2.ITMO universitySt. PetersburgRussia
  3. 3.Ioffe Physical–Technical InstituteRussian Academy of SciencesSt. PetersburgRussia
  4. 4.Peter the Great St. Petersburg Polytechnic UniversitySt. PetersburgRussia

Personalised recommendations