On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n +-GaN substrates
Fabrication, Treatment, and Testing of Materials and Structures
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Abstract
The physical and technological basics of the method used to lift off lightly and moderately doped n-GaN films from heavily doped n +-GaN substrates are considered. The detachment method is based on the free-charge-carrier absorption of IR laser light, which is substantially higher in n +-GaN films.
Keywords
Device Structure Free Charge Carrier Gallium Nitride Sacrificial Layer Liquid Gallium
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