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Semiconductors

, Volume 50, Issue 5, pp 699–704 | Cite as

On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n +-GaN substrates

  • M. V. Virko
  • V. S. Kogotkov
  • A. A. Leonidov
  • V. V. Voronenkov
  • Yu. T. Rebane
  • A. S. Zubrilov
  • R. I. Gorbunov
  • P. E. Latyshev
  • N. I. Bochkareva
  • Yu. S. Lelikov
  • D. V. Tarhin
  • A. N. Smirnov
  • V. Yu. Davydov
  • Yu. G. ShreterEmail author
Fabrication, Treatment, and Testing of Materials and Structures

Abstract

The physical and technological basics of the method used to lift off lightly and moderately doped n-GaN films from heavily doped n +-GaN substrates are considered. The detachment method is based on the free-charge-carrier absorption of IR laser light, which is substantially higher in n +-GaN films.

Keywords

Device Structure Free Charge Carrier Gallium Nitride Sacrificial Layer Liquid Gallium 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Pleiades Publishing, Ltd. 2016

Authors and Affiliations

  • M. V. Virko
    • 2
  • V. S. Kogotkov
    • 2
  • A. A. Leonidov
    • 2
  • V. V. Voronenkov
    • 1
  • Yu. T. Rebane
    • 1
  • A. S. Zubrilov
    • 1
  • R. I. Gorbunov
    • 1
  • P. E. Latyshev
    • 1
  • N. I. Bochkareva
    • 1
  • Yu. S. Lelikov
    • 1
  • D. V. Tarhin
    • 1
  • A. N. Smirnov
    • 1
  • V. Yu. Davydov
    • 1
  • Yu. G. Shreter
    • 1
    Email author
  1. 1.Ioffe Physical–Technical InstituteRussian Academy of SciencesSt. PetersburgRussia
  2. 2.Peter the Great St. Petersburg Polytechnic UniversitySt. PetersburgRussia

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