Semiconductors

, Volume 50, Issue 4, pp 559–565 | Cite as

Features of the diagnostics of metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures by high-resolution X-ray diffraction in the ω-scanning mode

  • I. S. Vasil’evskii
  • S. S. Pushkarev
  • M. M. Grekhov
  • A. N. Vinichenko
  • D. V. Lavrukhin
  • O. S. Kolentsova
Fabrication, Treatment, and Testing of Materials and Structures

Abstract

This study is devoted to the search for new possibilities of characterizing crystal-structure features using high-resolution X-ray diffraction. The emphasis is on the scanning mode across the diffraction vector (ω-scanning), since researchers usually pay little attention to this mode, and its capabilities have not yet been completely revealed. For the [011] and [01\(\bar 1\)] directions, the ω-peak half-width and the average tilt angle of the sample surface profile are compared. The diagnostic capabilities of X-ray scattering mapping are also studied. The objects of study are semiconductor nanoheterostructures with an InAlAs/InGaAs/InAlAs quantum well and an InxAl1–xAs metamorphic buffer grown by molecular-beam epitaxy on InP and GaAs substrates. Such nanoheterostructures are used to fabricate microwave transistors and monolithic integrated circuits. The objects under study are more completely characterized using the Hall effect, atomic-force microscopy, and low-temperature photoluminescence spectroscopy at 79 K.

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Copyright information

© Pleiades Publishing, Ltd. 2016

Authors and Affiliations

  • I. S. Vasil’evskii
    • 1
  • S. S. Pushkarev
    • 1
    • 2
  • M. M. Grekhov
    • 1
  • A. N. Vinichenko
    • 1
  • D. V. Lavrukhin
    • 2
  • O. S. Kolentsova
    • 1
  1. 1.National Research Nuclear University “MEPhI”MoscowRussia
  2. 2.Institute of Ultrahigh Frequency Semiconductor ElectronicsRussian Academy of SciencesMoscowRussia

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