On a reduction in cracking upon the growth of AlN on Si substrates by hydride vapor-phase epitaxy
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The main problem of the epitaxial growth of thick AlN layers on a Si substrate consists in the formation of cracks, which complicates the application of structures of this kind in the fabrication of semiconductor devices. The possibility of obtaining crack-free AlN layers with a thickness exceeding 1 μm and a mirror- smooth surface by hydride vapor-phase epitaxy is demonstrated. The properties of the layers are studied by X-diffraction analysis, optical and scanning electron microscopy, and Raman spectroscopy.
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- 7.Sh. Sh. Sharofidinov, A. A. Golovatenko, I. P. Nikitina, N. V. Seredova, M. G. Mynbaeva, V. E. Bougrov, M. A. Odnoblyudov, S. I. Stepanov, and V. I. Nikolaev, Fiz. Mekh. Mater. 22 (1), 53 (2015).Google Scholar