, Volume 50, Issue 2, pp 252–256 | Cite as

Electroluminescence properties of LEDs based on electron-irradiated p-Si

  • N. A. SobolevEmail author
  • K. F. Shtel’makh
  • A. E. Kalyadin
  • P. N. Aruev
  • V. V. Zabrodskiy
  • E. I. Shek
  • D. Yang
Physics of Semiconductor Devices


The electroluminescence (EL) in n +p–p + light-emitting-diode (LED) structures based on Si irradiated with electrons and annealed at high temperature is studied. The LEDs are fabricated by the chemical- vapor deposition of polycrystalline silicon layers doped with high concentrations of boron and phosphorus. Transformation of the EL spectra with current in the LEDs is well described by six Gaussian curves. The peak positions of these curves are current-independent and equal to 1233, 1308, 1363, 1425, 1479, and 1520 nm. The dependences of the integrated EL intensity and of the full-width at half-maximum (FWHM) of the lines on current are examined.


External Quantum Efficiency Polycrystalline Silicon Gaussian Curf Luminescence Line Electroluminescence Property 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


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Copyright information

© Pleiades Publishing, Ltd. 2016

Authors and Affiliations

  • N. A. Sobolev
    • 1
    Email author
  • K. F. Shtel’makh
    • 1
    • 2
  • A. E. Kalyadin
    • 1
  • P. N. Aruev
    • 1
  • V. V. Zabrodskiy
    • 1
  • E. I. Shek
    • 1
  • D. Yang
    • 3
  1. 1.Ioffe Physical–Technical InstituteRussian Academy of SciencesSt. PetersburgRussia
  2. 2.Peter the Great St. Petersburg Polytechnic UniversitySt. PetersburgRussia
  3. 3.State Key Laboratory of Silicon Materials and Department of Materials Science and EngineeringZhejiang UniversityHangzhouPeople’s Republic of China

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