Si:Si LEDs with room-temperature dislocation-related luminescence
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Silicon-based light-emitting diodes (LEDs) fabricated by the Si-ion implantation and chemical-vapor deposition methods are studied. Room-temperature dislocation-related electroluminescence (EL) is observed in LEDs based on n-Si. In LEDs based on p-Si, the EL is quenched at temperatures higher than 220 K. The EL-excitation efficiencies are measured for the D1 line at room temperature and the D1 and D4 lines at liquid-nitrogen temperature.
KeywordsPolycrystalline Silicon Solid State Phenom Peak Energy Position Direct Wafer Bonding Pump Current Density
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