Semiconductors

, Volume 50, Issue 1, pp 138–142 | Cite as

Formation of graphite/sic structures by the thermal decomposition of silicon carbide

  • M. G. Mynbaeva
  • A. A. Lavrent’ev
  • K. D. Mynbaev
Physics of Semiconductor DevicesFabrication, Treatment, and Testing of Materials and Structures

Abstract

The conditions in which carbon layers are synthesized on the surface of silicon carbide (SiC) wafers by thermal decomposition are studied. The effect of temperature and composition of the gas atmosphere on the structural properties of the layers being synthesized is analyzed. The conditions in which continuous graphite films with both single-crystal and polycrystalline structure can be obtained are determined.

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Copyright information

© Pleiades Publishing, Ltd. 2016

Authors and Affiliations

  • M. G. Mynbaeva
    • 1
    • 2
  • A. A. Lavrent’ev
    • 1
  • K. D. Mynbaev
    • 1
    • 2
  1. 1.Ioffe Physical–Technical InstituteRussian Academy of SciencesSt. PetersburgRussia
  2. 2.St. Petersburg National Research University of Information Technologies, Mechanics and OpticsSt. PetersburgRussia

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