Semiconductors

, Volume 49, Issue 12, pp 1651–1654 | Cite as

Temperature dependences of the photoluminescence intensities of centers in silicon implanted with erbium and oxygen ions

  • N. A. Sobolev
  • K. F. Shtel’makh
  • A. E. Kalyadin
  • E. I. Shek
Spectroscopy, Interaction with Radiation
  • 37 Downloads

Abstract

Low-temperature photoluminescence in n-Cz-Si after the implantation of erbium ions at an elevated temperature and subsequent implantation of oxygen ions at room temperature is studied. So-called X and W centers formed from self-interstitial silicon atoms, H and P centers containing oxygen atoms, and Er centers containing Er3+ ions are observed in the photoluminescence spectra. The energies of enhancing and quenching of photoluminescence for these centers are determined. These energies are determined for the first time for X and H centers. In the case of P and Er centers, the values of the energies practically coincide with previously published data. For W centers, the energies of the enhancing and quenching of photoluminescence depend on the conditions of the formation of these centers.

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Copyright information

© Pleiades Publishing, Ltd. 2015

Authors and Affiliations

  • N. A. Sobolev
    • 1
  • K. F. Shtel’makh
    • 1
    • 2
  • A. E. Kalyadin
    • 1
  • E. I. Shek
    • 1
  1. 1.Ioffe Physical–Technical InstituteRussian Academy of SciencesSt. PetersburgRussia
  2. 2.St. Petersburg State Polytechnical UniversitySt. PetersburgRussia

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