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Semiconductors

, Volume 49, Issue 12, pp 1665–1670 | Cite as

Increase in the Shockley–Read–Hall recombination rate in InGaN/GaN QWs as the main mechanism of the efficiency droop in LEDs at high injection levels

  • N. I. Bochkareva
  • Yu. T. Rebane
  • Yu. G. ShreterEmail author
Physics of Semiconductor Devices

Abstract

It is shown that the efficiency droop observed as the current through a GaN-based light-emitting diode increases is due to a decrease in the Shockley–Read–Hall nonradiative lifetime. The lifetime decreases with increasing current because a steadily growing number of traps in the density-of-states tails of InGaN/GaN quantum wells become nonradiative recombination centers upon the approach of quasi-Fermi levels to the band edges. This follows from the correlation between the efficiency droop and the appearance of negative differential capacitance, observed in the study. The correlation appears due to slow trap recharging via the trap-assisted tunneling of electrons through the n-type barrier of the quantum well and to the inductive nature of the diode-current variation with forward bias.

Keywords

Ideality Factor Forward Bias External Quantum Efficiency Exponential Tail Injection Level 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Pleiades Publishing, Ltd. 2015

Authors and Affiliations

  • N. I. Bochkareva
    • 1
  • Yu. T. Rebane
    • 1
  • Yu. G. Shreter
    • 1
    Email author
  1. 1.Ioffe Physical–Technical InstituteRussian Academy of SciencesSt. PetersburgRussia

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