Temperature dependences of the contact resistivity in ohmic contacts to n +-InN
- 55 Downloads
The temperature dependences of the contact resistivity (ρ c ) of ohmic contacts based on the Au-Ti-Pd-InN system are measured at an InN doping level of 2 × 1018 cm−3 in the temperature range of 4.2–300 K. At temperatures T > 150 K, linearly increasing dependences ρ c (T) are obtained. The dependences are explained within the mechanism of thermionic current flow through metal shunts associated with dislocations. Good agreement between theoretical and experimental dependences is achieved assuming that the flowing current is limited by the total resistance of the metal shunts, and the density of conductive dislocations is ∼5 × 109 cm−2. Using the X-ray diffraction method, the density of screw and edge dislocations in the structure under study is measured: their total density exceeds 1010 cm−2.
KeywordsDoping Level Ohmic Contact Optical Phonon Contact Resistivity Momentum Relaxation
Unable to display preview. Download preview PDF.
- 2.Indium Nitride and Related Alloys, Ed. by T. D. Veal, C. F. McConville, and W. J. Achaff (CRS Press, Boca Raton, 2010).Google Scholar
- 3.A. N. Kovalev, Transistors Based on Semiconductor Heterostructures (Izd. Dom MISiS, Moscow, 2011) [in Russian].Google Scholar
- 9.S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 3rd ed. (Wiley, New Jersey, 2007).Google Scholar
- 26.N. Cheng, H. von Seefeld, and M.-A. Nicolet, in Proceedings of the Symposium on Thin Films Interfaces and Interactions, Ed. by J. E. E. Baglin and J. M. Poate (Princeton Univ. Press, Princeton, NJ, 1980), Vol. 80, p. 323.Google Scholar
- 27.V. Bonch-Bruevich and S. Kalashnikov, Semiconductor Physics (Nauka, Moscow, 1990) [in Russian].Google Scholar
- 28.P. M. Malkov, I. B. Danilin, A. G. Zel’dovich, and A. B. Fradkov, Handbook of Physical and Technical Fundamentals of Cryogenics (Energiya, Moscow, 1973) [in Russian].Google Scholar
- 30.Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe, Ed. by M. M. Levinshtein, S. L. Rumyantsev, and M. S. Shur (Wiley, New York, 2001).Google Scholar
- 33.H. F. Matare, Defect Electronics in Semiconductors (Wiley-Interscience, New York, 1971).Google Scholar
- 34.V. I. Fistul’, Heavily Doped Semiconductors (Plenum Press, New York, 1969).Google Scholar
- 36.V. F. Gantmakher and I. B. Levinson, Carrier Scattering in Metals and Semiconductors (Nauka, Moscow, 1984; North-Holland, Amsterdam, 1987).Google Scholar