Semiconductors

, Volume 48, Issue 11, pp 1518–1524 | Cite as

Spectral features of the photoresponse of structures with silicon nanoparticles

  • O. S. Ken
  • D. A. Andronikov
  • D. A. Yavsin
  • A. V. Kukin
  • S. N. Danilov
  • A. N. Smirnov
  • O. M. Sreseli
  • S. A. Gurevich
Physics of Semiconductor Devices

Abstract

The spectral characteristics of the photoresponse of heterostructures with layers of densely packed amorphous silicon nanoparticles produced by laser electrodispersion are studied. The structures exhibit rectifying properties. Annealing in air results in the appearance of silicon oxide nanoparticles in the layers and, in addition, there occurs partial crystallization of the nanoparticles. The spectral characteristics of the photoresponse of the heterostructures have a number of specific features. Compared with standard silicon photodiodes, the sensitivity spectra of the structures under study are shifted to shorter wavelengths, with the shift becoming more pronounced upon annealing. The structures with an annealed layer of nanoparticles exhibit sensitivity in the spectral range 350–600 nm, which exceeds by more than an order of magnitude the sensitivity of unannealed structures. This effect can be attributed to a transistor-like effect in the structure.

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References

  1. 1.
    A. J. Nozik, in Next Generation Photovoltaics, Ed. by A. Martì and A. Luque (IOP Publ., Bristol and Philadelphia, 2004), p. 196.Google Scholar
  2. 2.
    V. M. Kozhevin, D. A. Yavsin, V. M. Kouznetsov, V. M. Busov, V. M. Mikushkin, S. Yu. Nikonov, S. A. Gurevich, and A. Kolobov, J. Vac. Sci. Technol. B 18, 1402 (2000).CrossRefGoogle Scholar
  3. 3.
    S. A. Gurevich, D. A. Andronikov, V. Yu. Davydov, V. M. Kozhevin, I. V. Makarenko, A. N. Titkov, D. A. Yavsin, T. L. Kulova, and A. M. Skundin, in Proceedings of the 14th International Symposium on Nanophysics and Nanoelectronics (Nizh. Novgorod, Russia, 2009), p. 333.Google Scholar
  4. 4.
    O. S. Yeltsina, D. A. Andronikov, A. V. Kukin, J. S. Vainshtein, and O. M. Sreseli, Phys. Status Solidi C 9, 1471 (2012).ADSCrossRefGoogle Scholar
  5. 5.
    D. M. Zhigunov, V. N. Seminogov, V. Yu. Timoshenko, V. I. Sokolov, V. N. Glebov, A. M. Malyutin, N. E. Maslova, O. A. Shalygina, S. A. Dyakov, A. S. Akhmanov, V. Ya. Panchenko, and P. K. Kashkarov, Physica E 41, 1006 (2009).ADSCrossRefGoogle Scholar
  6. 6.
    V. V. Zabrodskii, V. P. Belik, P. N. Aruev, B. Ya. Ber, S. V. Bobashev, M. V. Petrenko, and V. L. Sukhanov, Tech. Phys. Lett. 38, 812 (2012).ADSCrossRefGoogle Scholar
  7. 7.
    P. G. Pai, S. S. Chao, Y. Takagi, and G. Lucovsky, J. Vac. Sci. Technol. A 4, 689 (1986).ADSCrossRefGoogle Scholar
  8. 8.
    G. Allan, C. Delerue, and M. Lannoo, Phys. Rev. Lett. 78, 3161 (1997).ADSCrossRefGoogle Scholar
  9. 9.
    A. Rose, Concepts in Photoconductivity and Allied Problems (Wiley, New York, 1963; Mir, Moscow, 1966), p. 91.Google Scholar
  10. 10.
    J. S. Vainshtein, O. S. Yeltsina, E. I. Terukov, and O. M. Sreseli, Physica E 49, 72 (2013).ADSCrossRefGoogle Scholar
  11. 11.
    K. Nishio, J. Koga, T. Yamaguchi, and F. Yonezawa, Phys. Rev. B 67, 195304 (2003).ADSCrossRefGoogle Scholar
  12. 12.
    I. V. Grekhov, M. I. Veksler, P. A. Ivanov, T. P. Samsonova, and A. F. Shulekin, Semiconductors 32, 1024 (1998).ADSCrossRefGoogle Scholar
  13. 13.
    J.-M. Shieh, Y.-F. Lai, W.-X. Ni, et al., Appl. Phys. Lett. 90, 051105 (2007).ADSCrossRefGoogle Scholar
  14. 14.
    D. Timmerman, I. Izeddin, P. Stallinga, I. N. Yassievich, and T. Gregorkiewicz, Nature Photon. 2, 105 (2008).ADSCrossRefGoogle Scholar

Copyright information

© Pleiades Publishing, Ltd. 2014

Authors and Affiliations

  • O. S. Ken
    • 1
  • D. A. Andronikov
    • 1
  • D. A. Yavsin
    • 1
  • A. V. Kukin
    • 1
  • S. N. Danilov
    • 2
  • A. N. Smirnov
    • 1
  • O. M. Sreseli
    • 1
  • S. A. Gurevich
    • 1
  1. 1.Ioffe Physical-Technical InstituteRussian Academy of SciencesSt. PetersburgRussia
  2. 2.University of RegensburgRegensburgGermany

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