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Semiconductors

, Volume 48, Issue 4, pp 476–480 | Cite as

Morphological characteristics of grain boundaries in multicrystalline silicon

  • S. M. Pescherova
  • A. I. Nepomnyaschih
  • L. A. Pavlova
  • I. A. Eliseev
  • R. V. Presnyakov
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors

Abstract

The structure of multicrystalline silicon and the distribution of the nonequlibrium charge-carrier lifetime over the surface and in the bulk of samples are investigated. Regular dependences of the electrical characteristics on the structure of grains and grain boundaries are established. Grain boundaries in multisilicon grown by the Bridgman-Stockbarger technique from a melt of metallurgical grade silicon are investigated. Metallographic and microscopic descriptions of grain boundaries can be used in fitting the crystallization conditions for growing multisilicon with the perfect structure for solar-power engineering.

Keywords

Atomic Force Microscopy Image Twin Boundary Subgrain Boundary Backscatter Electron Image Special Boundary 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Pleiades Publishing, Ltd. 2014

Authors and Affiliations

  • S. M. Pescherova
    • 1
  • A. I. Nepomnyaschih
    • 1
  • L. A. Pavlova
    • 1
  • I. A. Eliseev
    • 1
  • R. V. Presnyakov
    • 1
  1. 1.Vinogradov Institute of GeochemistryRussian Academy of Sciences, Siberian BranchIrkutskRussia

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