Semiconductors

, Volume 48, Issue 4, pp 446–450 | Cite as

Nonlinear optical effect upon the irradiation of GaN with cluster ions

  • P. A. Karaseov
  • K. V. Karabeshkin
  • A. I. Titov
  • V. B. Shilov
  • G. M. Ermolaeva
  • V. G. Maslov
  • A. O. Orlova
Spectroscopy, Interaction with Radiation

Abstract

The effect of the irradiation of single-crystal GaN films with accelerated atomic (P) and molecular (PF4) ions with an energy of 0.6 keV amu−1 on the crystal structure and optical properties of the films is considered. It is shown that, compared to irradiation with atomic ions, irradiation with small clusters induces (i) more rapid accumulation of structural defects, (ii) more efficient suppression of the violet luminescence band, and (iii) shorter decay times of the intensity of this band.

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Copyright information

© Pleiades Publishing, Ltd. 2014

Authors and Affiliations

  • P. A. Karaseov
    • 1
  • K. V. Karabeshkin
    • 1
  • A. I. Titov
    • 1
  • V. B. Shilov
    • 2
  • G. M. Ermolaeva
    • 2
  • V. G. Maslov
    • 3
  • A. O. Orlova
    • 3
  1. 1.St. Petersburg State Polytechnical UniversitySt. PetersburgRussia
  2. 2.Vavilov State Optical InstituteSt. PetersburgRussia
  3. 3.St. Petersburg National Research University of Information Technologies, Mechanics, and OpticsSt. PetersburgRussia

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