Semiconductors

, Volume 47, Issue 12, pp 1604–1609

Quasi-elastic and inelastic approximations in the description of the charge carrier dynamics in diamond

  • Yu. M. Belousov
  • V. R. Soloviev
  • I. V. Chernousov
Symposium “Nanophysics and Nanoelectronics”, Nizhni Novgorod, March, 2013 (Continuation)
  • 24 Downloads

Abstract

The differences between the quasi-elastic and inelastic approximations in calculating the carrier mobility in diamond is numerically estimated for the spatially uniform and one-dimensional cases. Data on the steady-state mobility at 20 K in the quasi-elastic and inelastic approximations differ by a factor of about 6. In the one-dimensional case for a time-constant carrier source located deep inside the sample, the data on the heavy-hole mobility in the quasi-elastic and inelastic approximations nearly coincide. When the initial distribution function is located at the sample edge, the time dependences of the carrier mobility in the quasi-elastic and inelastic approximations are markedly different. The results obtained are of importance for the interpretation of electrophysical experiments with diamond.

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Copyright information

© Pleiades Publishing, Ltd. 2013

Authors and Affiliations

  • Yu. M. Belousov
    • 1
  • V. R. Soloviev
    • 1
  • I. V. Chernousov
    • 1
  1. 1.Moscow Institute of Physics and TechnologyDolgoprudnyiRussia

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