Pseudomorphic GeSn/Ge (001) heterostructures
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The synthesis of pseudomorphic GeSn heterostructures on a Ge (001) substrate by molecular-beam epitaxy is described. Investigations by transmission electron microscopy show that the GeSn layers are defect free and possess cubic diamondlike structure. Photoluminescence spectroscopy reveals interband radiative recombination in the GeSn quantum wells, which is identified as indirect transitions between the subbands of heavy electrons and heavy holes. On the basis of experimental data and modeling of the band structure of pseudomorphic GeSn compounds, the lower boundary of the bowing parameter for the indirect band gap is estimated as b L ≥ 1.47 eV.
KeywordsHeavy Hole Indirect Transition Valence Band Maximum High Resolution Transmission Electron Microscopy Image Heavy Electron
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- 13.O. Madelung, M. Schultz, and H. Weiss, Physics of Group IV Elements and III-V Compounds, 1st ed. (Springer, New York, 1982), vol. 17a.Google Scholar