Advertisement

Semiconductors

, Volume 47, Issue 5, pp 686–694 | Cite as

A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures

  • M. I. VexlerEmail author
  • S. E. Tyaginov
  • Yu. Yu. Illarionov
  • Yew Kwang Sing
  • Ang Diing Shenp
  • V. V. Fedorov
  • D. V. Isakov
Physics of Semiconductor Devices

Abstract

The algorithm is suggested for calculating the IV characteristics of a voltage- or current-controlled metal-tunnel-thin insulator-semiconductor system. The basic underlying physical models are discussed. Applicability of the algorithm is confirmed by a comparison of the simulation results with the measurement data obtained by the authors and borrowed from the literature, for several different structures. The presented information is supposed to suffice for calculating the electrical characteristics of the investigated structures with the various combinations of materials: metal or polysilicon gate, single-layer or stacked insulator, and semiconductor with any doping type and level.

Keywords

Versus Characteristic Minority Carrier Solid State Electron Quasi Fermi Level Flat Band Voltage 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    K. Kuhn, Ch. Kenyon, A. Kornfeld, M. Liu, A. Maheshwari, W.-k. Shih, S. Sivakumar, G. Taylor, P. VanDerVoorn, and K. Zawadzki, Intel Technol. J. 12(12), 93 (2008).Google Scholar
  2. 2.
    E. Aderstedt, I. Medugorac, and P. Lundgren, Solid State Electron. 46, 497 (2002).ADSCrossRefGoogle Scholar
  3. 3.
    E. V. Ostroumova and A. A. Rogachev, Semiconductors 28, 793 (1994).ADSGoogle Scholar
  4. 4.
    A. Ya. Vul’ and A. T. Dideikin, Sensors Actuat. A 39, 7 (1993).CrossRefGoogle Scholar
  5. 5.
    Th. Kauerauf, B. Govoreanu, R. Degreave, G. Groeseneken, and H. Maes, Solid State Electron. 49, 695 (2005).ADSCrossRefGoogle Scholar
  6. 6.
    H. Bachhofer, H. Reisinger, E. Bertagnolli, and H. von Philipsborn, J. Appl. Phys. 89, 2791 (2001).ADSCrossRefGoogle Scholar
  7. 7.
    T. Kanazawa, R. Fujii, T. Wada, Y. Suzuku, M. Watanabe, and M. Asada, Appl. Phys. Lett. 90, 092101 (2007).ADSCrossRefGoogle Scholar
  8. 8.
    A. Ghetti, J. Bude, P. Silverman, A. Hamad, and H. Vayda, IEICE Trans. Electron. E83-C, 1175 (2000).Google Scholar
  9. 9.
    N. Yang, W. K. Henson, J. R. Hauser, and J. J. Wortman, IEEE Trans. Electron. Dev. 46, 1464 (1999).ADSCrossRefGoogle Scholar
  10. 10.
    I. V. Grekhov, G. G. Kareva, S. E. Tyaginov, and M. I. Vexler, Microelectron. Reliab. 47, 669 (2007).CrossRefGoogle Scholar
  11. 11.
    P. Palestri, N. Barin, D. Brunel, C. Busseret, A. Campera, P. A. Childs, F. Driussi, C. Fiegna, G. Fiori, R. Gusmeroli, G. Iannaccone, M. Karner, H. Kosina, A. L. Lacaita, E. Langer, B. Majkusiak, C. Monzio Compagnoni, A. Poncet, E. Sangiorgi, L. Selmi, A. S. Spinelli, and J. Walczak, IEEE Trans. Electron. Dev. 54, 106 (2007).ADSCrossRefGoogle Scholar
  12. 12.
    S. Sze, Physics of Semiconductor Devices (Wiley, New York, 1969; Mir, Moscow, 1984), vol. 2, ch. 8.Google Scholar
  13. 13.
    T. Ando, A. Fowler, and F. Stern, Electronic properties of two-dimensional systems (Mir, Moscow, 1985); Rev. Mod. Phys. 54, 437 (1982).Google Scholar
  14. 14.
    A. F. Shulekin, M. I. Vexler, and H. Zimmermann, Semicond. Sci. Technol. 14, 470 (1999).ADSCrossRefGoogle Scholar
  15. 15.
    M. I. Vexler, Solid State Electron. 47, 1283 (2003).ADSCrossRefGoogle Scholar
  16. 16.
    G. A. M. Hurkx, D. B. M. Klaassen, and M. P. G. Knuvers, IEEE Trans. Electron. Dev. 39, 331 (1992).ADSCrossRefGoogle Scholar
  17. 17.
    B. Jonsson and S. T. Eng, IEEE J. Quantum Electron. 26, 2025 (1990).ADSCrossRefGoogle Scholar
  18. 18.
    L. D. Landau and E. M. Lifshitz, Course of Theoretical Physics, Vol. 3: Quantum Mechanics: Non-Relativistic Theory (Nauka, Moscow, 1989, 4th ed.; Pergamon, New York, 1977, 3rd ed.).Google Scholar
  19. 19.
    W. Franz, in Handbuch der Physik, Ed. by S. Flügge (Springer, Berlin, 1956), vol. 18, p. 155.Google Scholar
  20. 20.
    S. E. Tyaginov, M. I. Vexler, A. F. Shulekin, and I. V. Grekhov, Microelectron. Eng. 83, 376 (2006).CrossRefGoogle Scholar
  21. 21.
    W. E. Drummond and J. L. Moll, J. Appl. Phys. 42, 5556 (1971).ADSCrossRefGoogle Scholar
  22. 22.
    Y.-C. Yeo, Q. Lu, W. C. Lee, T.-J. King, C. Hu, X. Wang, X. Guo, and T. P. Ma, IEEE Electron. Dev. Lett. 21, 540 (2000).ADSCrossRefGoogle Scholar
  23. 23.
    H. Yu, Y.-T. Hou, M.-F. Li, and D.-L. Kwong, IEEE Trans. Electron Dev. 49, 1158 (2002).ADSCrossRefGoogle Scholar
  24. 24.
    S. Monaghan, P. K. Hurley, K. Cherkaoui, M. A. Negara, and A. Schenk, Solid State Electron. 53, 438 (2009).ADSCrossRefGoogle Scholar
  25. 25.
    J. Robertson, J. Vac. Sci. Technol. B 18, 1785 (2000).CrossRefGoogle Scholar
  26. 26.
    S. K. Lai, P. V. Dressendorfer, T. P. Ma, and R. C. Barker, Appl. Phys. Lett. 38, 41 (1981).ADSCrossRefGoogle Scholar
  27. 27.
    J. P. Shiely, PhD Thesis (Duke Univ., 1999).Google Scholar
  28. 28.
    A. Schenk, Advanced Physical Models for Silicon Device Simulations (Springer, Wien, New York, 1998), ch. 5.CrossRefGoogle Scholar
  29. 29.
    Y. Y. Illarionov, M. I. Vexler, S. M. Suturin, V. V. Fedorov, N. S. Sokolov, K. Tsutsui, and K. Takahashi, Microelectron. Eng. 88, 1291 (2011).CrossRefGoogle Scholar
  30. 30.
    M. I. Vexler, N. S. Sokolov, S. M. Suturin, A. G. Banshchikov, S. E. Tyaginov, and T. Grasser, J. Appl. Phys. 105, 083716 (2009).ADSCrossRefGoogle Scholar
  31. 31.
    W. Feller, An Introduction to Probability Theory and its Applications (Wiley, New York, 1967; Mir, Moscow, 1984), vol. 2.Google Scholar
  32. 32.
    S. E. Tyaginov, M. I. Vexler, A. F. Shulekin, and I. V. Grekhov, Solid State Electron. 49, 1192 (2005).ADSCrossRefGoogle Scholar

Copyright information

© Pleiades Publishing, Ltd. 2013

Authors and Affiliations

  • M. I. Vexler
    • 1
    Email author
  • S. E. Tyaginov
    • 1
    • 2
  • Yu. Yu. Illarionov
    • 1
    • 3
  • Yew Kwang Sing
    • 4
  • Ang Diing Shenp
    • 4
  • V. V. Fedorov
    • 1
  • D. V. Isakov
    • 3
  1. 1.Ioffe Physical-Technical InstituteRussian Academy of SciencesSt. PetersburgRussia
  2. 2.TU ViennaInstitute for MicroelectronicsWienAustria
  3. 3.Singapore Institute of Manufacturing TechnologySingaporeSingapore
  4. 4.Nanyang Technological UniversitySingaporeSingapore

Personalised recommendations