, Volume 47, Issue 5, pp 686–694 | Cite as

A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures

  • M. I. VexlerEmail author
  • S. E. Tyaginov
  • Yu. Yu. Illarionov
  • Yew Kwang Sing
  • Ang Diing Shenp
  • V. V. Fedorov
  • D. V. Isakov
Physics of Semiconductor Devices


The algorithm is suggested for calculating the IV characteristics of a voltage- or current-controlled metal-tunnel-thin insulator-semiconductor system. The basic underlying physical models are discussed. Applicability of the algorithm is confirmed by a comparison of the simulation results with the measurement data obtained by the authors and borrowed from the literature, for several different structures. The presented information is supposed to suffice for calculating the electrical characteristics of the investigated structures with the various combinations of materials: metal or polysilicon gate, single-layer or stacked insulator, and semiconductor with any doping type and level.


Versus Characteristic Minority Carrier Solid State Electron Quasi Fermi Level Flat Band Voltage 
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Copyright information

© Pleiades Publishing, Ltd. 2013

Authors and Affiliations

  • M. I. Vexler
    • 1
    Email author
  • S. E. Tyaginov
    • 1
    • 2
  • Yu. Yu. Illarionov
    • 1
    • 3
  • Yew Kwang Sing
    • 4
  • Ang Diing Shenp
    • 4
  • V. V. Fedorov
    • 1
  • D. V. Isakov
    • 3
  1. 1.Ioffe Physical-Technical InstituteRussian Academy of SciencesSt. PetersburgRussia
  2. 2.TU ViennaInstitute for MicroelectronicsWienAustria
  3. 3.Singapore Institute of Manufacturing TechnologySingaporeSingapore
  4. 4.Nanyang Technological UniversitySingaporeSingapore

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