Determination of the excitation cross section of photoluminescence from an Er ion in the case of homogeneous and inhomogeneous optical excitation
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Dependences of the erbium photoluminescence intensity in Si:Er/Si structures have been studied in cases of homogeneous (over the sample surface) and inhomogeneous optical excitation. It is shown that the excitation mode strongly affects the type of the dependences obtained. A method for determining the excitation cross section of the Er ion under both continuous and pulsed optical pumping is discussed. The value obtained for the effective excitation cross section of erbium ions in silicon, σ = 5 × 10−14 cm2 at a temperature of 8 K, is an order of magnitude larger than the values known from published material.
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